Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots
Source abstract
Abstract
In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.
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Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Semiconductor materials and devices · Quantum and electron transport phenomena
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Affiliations
Universität Würzburg 1 Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen-Research Center for Complex Material Systems, , Am Hubland, D-97074, Würzburg, Germany
University of Tokyo 2 , 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
Funding
Japanese Science and Technology Agency · Deutsche Forschungsgemeinschaft
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