journal article·2015-10-01Open access

Dynamic characteristics of two-state lasing quantum dot lasers under large signal modulation

Zun-Ren Lv, Hai-Ming Ji, Shuai Luo, Feng Gao, Feng Xu, De-Hang Xiao, Tao Yang

AIP Advances· Volume 5· Issue 10

Abstract

Large signal modulation characteristics of the simultaneous ground-state (GS) and excited-state (ES) lasing quantum dot lasers are theoretically investigated. Relaxation oscillations of ‘0 → 1’ and ‘1 → 0’ in the GS lasing region (Region I), the transition region from GS lasing to two-state lasing (Region II) and the two-state lasing region (Region III) are compared and analyzed. It is found that the overshooting power and settling time in both Regions I and III decrease as the bias current increases. However, there exist abnormal behaviors of the overshooting power and settling time in Region II owing to the occurrence of ES lasing, which lead to fuzzy eye diagrams of the GS and ES lasing. Moreover, the ES lasing in Region III possesses much better eye diagrams because of its shorter settling time and smaller overshooting power over the GS lasing in Region I.
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Research context

OpenAlex topics: Semiconductor Quantum Structures and Devices · Semiconductor Lasers and Optical Devices · Photonic and Optical Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Institute of Semiconductors, Chinese Academy of Sciences 1 Key Laboratory of Semiconductor Materials Science, , Beijing 100083, China

Heilongjiang University 2 College of Physical Science and Technology, , Harbin 150080, China

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