Large magnetoresistance in topological insulator candidate TaSe3
Source abstract
Abstract
Large unsaturated magnetoresistance (XMR) with magnitude ∼103% is observed in topological insulator candidate TaSe3 from our high field (up to 38 T) measurements. Two oscillation modes, associated with one hole pocket and two electron pockets in the bulk, respectively, are detected from our Shubnikov-de Hass measurements, consistent with our first-principles calculations. With the detailed Hall measurements performed, our two-band model analysis exhibits an imperfect density ratio nh/ne ≈ 0.9 at T < 20 K, which suggests that the carrier compensations account for the XMR in TaSe3.
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Research context
OpenAlex topics: Topological Materials and Phenomena · Graphene research and applications · 2D Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University 1 , Nanjing 210093, China
Atomic Manufacture Institute (AMI) 2 , Nanjing 211805, China
School of Physics, University of Wisconsin-Madison 3 , Madison, Wisconsin 53706, USA
High Magnetic Field Laboratory, Chinese Academy of Science 4 , Hefei, 230031 Anhui, China
Funding
Fok Ying Tung Education Foundation of China · National Key R&D Program of China · Opening Project of the Wuhan National High Magnetic Field Center · Natural Science Foundation of Jiangsu Province · Fundamental Research Funds for the Central Universities · National Natural Science Foundation of China
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