V-shaped dislocations in a GaN epitaxial layer on GaN substrate
Abstract
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Metal and Thin Film Mechanics · ZnO doping and properties
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Affiliations
Institute of Materials and Systems for Sustainability, Nagoya University 1 , Furo-cho, Chikusa-ku 464-8601, Nagoya, Japan
National Institute for Materials Science 2 , 1-1, Namiki, 305-0044 Tsukuba, Japan
Institute of Post-LED Photonics, Tokushima University 3 , 2-1 Minami-Josanjima, 770-8506 Tokushima, Japan
Department of Electrical Engineering and Computer Science, Nagoya University 4 , Furo-cho, Chikusa-ku 464-8603, Nagoya, Japan
Institute of High Pressure Physics, Polish Academy of Sciences 5 , Sokolowska 29/37, Warsaw 01-142, Poland
Akasaki Research Center, Nagoya University 6 , Furo-cho, Chikusa-ku 464-8603, Nagoya, Japan
Venture Business Laboratory, Nagoya University 7 , Furo-cho, Chikusa-ku 464-8603, Nagoya, Japan
Funding
Ministry of Education, Culture, Sports, Science and Technology · Japan Society for the Promotion of Science