Effect of thermal annealing on carrier localization and efficiency of spin detection in GaAsSb epilayers grown on InP
Source abstract
Abstract
The effect of the thermal annealing on the optical and spin properties in GaAs0.44Sb0.56 epilayers grown on InP was investigated via photoreflectance, power-dependent and time-resolved photoluminescence spectroscopy as well as optical orientation measurement. The carrier’s localization and the optical spin detection efficiency increase with an increase of annealing temperature up to 600 °C. The enhancement of the spin detection efficiency is attributed to both the shortening of the electron lifetime and the prolonging of the spin lifetime as a result of the enhanced carriers’ localization induced by the annealing process. Our results provided an approach to enhance spin detection efficiency of GaAsSb with its PL emission in the 1.55 μm region.
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Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Quantum and electron transport phenomena · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences 1 , Shanghai 200083, China
University of Chinese Academy of Sciences 2 , Beijing 100049, China
Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology 3 , Wuhan 430074, China
Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences 4 , Shanghai 200083, China
Funding
Hundred Talents Program,CAS · National Natural Science Foundation of China
References (37)
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