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journal article·2017-07-01Open access

Determination of the impact of Bi content on the valence band energy of GaAsBi using x-ray photoelectron spectroscopy

K. Collar, J. Li, W. Jiao, Y. Guan, M. Losurdo, J. Humlicek, A. S. Brown

AIP Advances· Volume 7· Issue 7
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Abstract

We investigate the change of the valence band energy of GaAs1-xBix (0<x<0.025) as a function of dilute bismuth (Bi) concentration, x, using x-ray photoelectron spectroscopy (XPS). The change in the valence band energy per addition of 1 % Bi is determined for strained and unstrained thin films using a linear approximation applicable to the dilute regime. Spectroscopic ellipsometry (SE) was used as a complementary technique to determine the change in GaAsBi bandgap resulting from Bi addition. Analysis of SE and XPS data together supports the conclusion that ∼75% of the reduction in the bandgap is in the valence band for a compressively strained, dilute GaAsBi thin film at room temperature.
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Research context

OpenAlex topics: Advanced Chemical Physics Studies · Surface and Thin Film Phenomena · Semiconductor Quantum Structures and Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Physics, Duke University 1 , Durham, North Carolina 27708, USA

Department of Electrical and Computer Engineering, Duke University 2 , Durham, North Carolina 27708, USA

Department of Material Science and Engineering, University of Wisconsin 3 , Madison, WI 53706, USA

Institute of Nanotechnology, CNR-NANOTEC, Dept. Chemistry 4 , Via Orabona 4, 70126 Bari, Italy

Department of Condensed Matter Physics and CEITEC, Masaryk University 5 , CZ-61137 Brno, Czech Republic

Funding

National Science Foundation · Horizon 2020 Framework Programme

References (27)

Show source-provided references
1. Appl. Phys. Lett. · 2007 · 91 · 5190910.1063/1.2768312 ↗
2. Phys. Rev. Lett. · 2006 · 97 · 6720510.1103/physrevlett.97.067205 ↗
3. J. Appl. Phys. · 2012 · 111 · 11310810.1063/1.4728028 ↗
4. Phys. Rev. B - Condens. Matter Mater. Phys. · 2011 · 84 · 1
5. Japanese J. Appl. Physics, Part 1 Regul. Pap. Short Notes Rev. Pap. · 2003 · 42 · 37110.1143/jjap.42.371 ↗
6. Phys. Rev. B - Condens. Matter Mater. Phys. · 2013 · 87 · 1
7. J. Appl. Phys. · 2014 · 116 · 23350810.1063/1.4904740 ↗
8. Appl. Phys. Lett. · 2008 · 92 · 26210510.1063/1.2953176 ↗
9. J. Cryst. Growth · 2015 · 425 · 24510.1016/j.jcrysgro.2015.01.019 ↗
10. Phys. Rev. B · 2008 · 77 · 8520910.1103/physrevb.77.085209 ↗
11. Appl. Phys. Lett. · 2003 · 82 · 224510.1063/1.1565499 ↗
12. Opt. Mater. (Amst). · 2015 · 42 · 6710.1016/j.optmat.2014.12.020 ↗
13. J. Mater. Sci. Mater. Electron. · 2009 · 20 · 36310.1007/s10854-008-9625-1 ↗
14. Comput. Mater. Sci. · 2008 · 43 · 81810.1016/j.commatsci.2008.01.059 ↗
15. J. Vac. Sci. Technol. B Microelectron. Nanom. Struct. · 2005 · 23 · 137910.1116/1.1993615 ↗
16. AIP Adv. · 2015 · 5 · 6710310.1063/1.4922139 ↗
17. 2013
18. Phys. Rev. B · 1987 · 35 · 917410.1103/physrevb.35.9174 ↗
19. Phys. Rev. B · 1983 · 27 · 98510.1103/physrevb.27.985 ↗
20. Surf. Interface Anal. · 2005 · 37 · 67310.1002/sia.2062 ↗
21. Phys. Rev. B · 1994 · 4910.1103/physrevb.49.11159 ↗
22. J. Vac. Sci. Technol. B Microelectron. Nanom. Struct. · 1987 · 5 · 125010.1116/1.583722 ↗
23. Phys. Rev. B · 2007 · 75 · 4520310.1103/physrevb.75.045203 ↗
24. Phys. Rev. Lett. · 1980 · 44 · 162010.1103/physrevlett.44.1620 ↗
25. Appl. Surf. Sci. · 2000 · 158 · 29210.1016/s0169-4332(00)00012-x ↗
26. J. Vac. Sci. Technol. B Microelectron. Nanom. Struct. · 2004 · 22 · 220510.1116/1.1768525 ↗
27. Appl. Phys. Lett. · 2014 · 10510.1063/1.4895116 ↗