Bipolar resistive switching behaviors of ITO nanowire networks
Source abstract
Abstract
We have fabricated indium tin oxide (ITO) nanowire (NW) networks on aluminum electrodes using electron beam evaporation. The Ag/ITO-NW networks/Al capacitor exhibits bipolar resistive switching behavior. The resistive switching characteristics of ITO-NW networks are related to the morphology of NWs. The x-ray photoelectron spectroscopy was used to obtain the chemical nature from the NWs surface, investigating the oxygen vacancy state. A stable switching voltages and a clear memory window were observed in needle-shaped NWs. The ITO-NW networks can be used as a new two-dimensional metal oxide material for the fabrication of high-density memory devices.
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Research context
OpenAlex topics: Advanced Memory and Neural Computing · Transition Metal Oxide Nanomaterials · Ferroelectric and Negative Capacitance Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Xi’an Jiaotong University 1 Key Laboratory of Physical Electronics and Devices of Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics & Information Technology, , Xi’an, Shaanxi, P. R. China
Xi’an Jiaotong University 2 Solid-State Lighting Engineering Research Center, , 710049, Xi’an, Shaanxi, P. R. China
Funding
China Postdoctoral Science Foundation
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