Growth and characterization of Bi2Se3 crystals by chemical vapor transport
Source abstract
Abstract
Regularly-shaped high-quality Bi2Se3 crystals were grown by a chemical vapor transport using iodine as the transport agent. In addition to exhibiting a characteristic Dirac cone for a topological insulator, the Bi2Se3 crystals show some outstanding properties including additional crystallographic surfaces, large residual resistance ratio (∼10), and high mobility (∼8000 cm2·V−1·s−1). The low-temperature resistivity abnormally increases with applying pressures up to 1.7 GPa, and no superconductivity was observed down to 0.4 K.
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Research context
OpenAlex topics: Topological Materials and Phenomena · Advanced Condensed Matter Physics · Quantum many-body systems
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Zhejiang University 1 Department of Physics and State Key Lab of Silicon Materials, , Hangzhou 310027, P. R. China
Fudan University 2 State Key Laboratory of Surface Physics, and Department of Physics, , Shanghai 200433, P. R. China
University of Tokyo 3 Institute for Solid State Physics, , Kashiwanoha, Kashiwa, Chiba 277-8581, Japan
Funding
National Natural Science Foundation of China
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