Sidewall depletion in nano-patterned LAO/STO heterostructures
Source abstract
Abstract
We have investigated the conductance of nanostructures fabricated from the quasi-two-dimensional electron gas (q2DEG) formed at the LaAlO3/ SrTiO3 (LAO/STO) interface. Measurements were done at room temperature and at T=4.2 K. Our findings show that the fully industry compatible nano-patterning process conserves the conductivity except for a small temperature dependent sidewall depletion which we attribute to etch damage induced by the dry etching process.
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Research context
OpenAlex topics: Electronic and Structural Properties of Oxides · Semiconductor materials and devices · Ferroelectric and Negative Capacitance Devices
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Affiliations
Martin-Luther-Universität Halle-Wittenberg 1 Institut für Physik, , Von-Danckelmann-Platz 3, D-06120 Halle, Germany
Martin-Luther-Universität Halle-Wittenberg 2 Interdisziplinäres Zentrum für Materialwissenschaften, , Heinrich-Damerow-Str. 4, 06120 Halle, Germany
Funding
European Commission · Deutsche Forschungsgemeinschaft
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