Low-energy mass-selected ion beam deposition of silicon carbide with Bernas-type ion source using methylsilane
Source abstract
Abstract
Methylsilane-derived fragment ions obtained from a Bernas-type ion source were investigated using a low-energy mass-selected ion beam system. Based on mass-energy analyzer measurements, these ions were determined to be H+, H2+, H3+, CH3+, Si+, and SiCH5+. The SiCH5+ ions were selected and injected into a Si(111) substrate at 750 °C. The ion energy was 40 eV. This injection led to the formation of a silicon carbide film on the Si substrate. An analysis of this film indicates that this type of ion beam deposition method can efficiently form silicon carbide film.
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Research context
OpenAlex topics: Silicon Carbide Semiconductor Technologies · Thin-Film Transistor Technologies · Diamond and Carbon-based Materials Research
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University 1 , Suita, Osaka 565-0871, Japan
Department of Chemistry, Nara Women’s University 2 , Kitauoyanishi-machi, Nara, Nara 630-8506, Japan
National Institute of Advanced Industrial Science and Technology (AIST) 3 , Ikeda, Osaka 563-8577, Japan
Funding
Japan Society for the Promotion of Science
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