Temperature-dependent efficiency droop in AlGaN epitaxial layers and quantum wells
Source abstract
Abstract
Luminescence efficiency droop has been studied in AlGaN epitaxial layers and multiple quantum wells (MQWs) with different strength of carrier localization in a wide range of temperatures. It is shown that the dominant mechanism leading to droop, i.e., the efficiency reduction at high carrier densities, is determined by the carrier thermalization conditions and the ratio between carrier thermal energy and localization depth. The droop mechanisms, such as the occupation-enhanced redistribution of nonthermalized carriers, the enhancement of nonradiative recombination due to carrier delocalization, and excitation-enhanced carrier transport to extended defects or stimulated emission, are discussed.
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor Quantum Structures and Devices · Ga2O3 and related materials
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Affiliations
Vilnius University 1 Semiconductor Physics Department and Institute of Applied Research, , Sauletekio 9-III, LT-10222, Vilnius, Lithuania
Rensselaer Polytechnic Institute 2 Department of ECE and CIE, , Troy, NY 12180, USA
Sensor Electronic Technology, Inc. 3 , 1195 Atlas Road, Columbia, SC 29209, USA
Funding
Engineering Research Centers Program (ERC) of the National Science Foundation · European Social Func under the Global Grant measure · New York State under NYSTAR
References (22)
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