Near-infrared emission from mesoporous crystalline germanium
Source abstract
Abstract
Mesoporous crystalline germanium was fabricated by bipolar electrochemical etching of Ge wafer in HF-based electrolyte. It yields uniform mesoporous germanium layers composed of high density of crystallites with an average size 5-7 nm. Subsequent extended chemical etching allows tuning of crystallites size while preserving the same chemical composition. This highly controllable nanostructure exhibits photoluminescence emission above the bulk Ge bandgap, in the near-infrared range (1095-1360nm) with strong evidence of quantum confinement within the crystallites.
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Research context
OpenAlex topics: Silicon Nanostructures and Photoluminescence · Nanowire Synthesis and Applications · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Université de Sherbrooke 1 Institut Interdisciplinaire d’Innovation Technologique (3IT), , 3000 Boulevard Université, Sherbrooke, J1K OA5, Québec, Canada
Université de Sherbrooke 2 Laboratoire Nanotechnologies Nanosystèmes (LN2)-CNRS UMI-3463, , 3000 Boulevard Université, Sherbrooke, J1K OA5, Québec, Canada
McMaster University 3 Canadian Centre for Electron Microscopy, Brockhouse Institute for Materials Research, , Hamilton, Ontario, L8S 4M1, Canada
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