Effect of electric field concentration using nanopeak structures on the current–voltage characteristics of resistive switching memory
Source abstract
Abstract
An attempt to reduce the SET voltage and RESET current of resistive switching (RS) memory was made using a geometric array of nanopeak (NP) structures. Bottoms of anodic porous alumina were used to form the NP structures that act as guides for the formation of conductive filaments that effectively concentrate the electric field. Samples were fabricated with flat surfaces (FS) and with two types of NP structure with different NP pitch. The NP samples provided SET voltages less than 2 V with narrow distributions and the RESET current was lower than that with the FS sample.
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Research context
OpenAlex topics: Advanced Memory and Neural Computing · Transition Metal Oxide Nanomaterials · Ferroelectric and Negative Capacitance Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Kansai University 1 Graduate School of Engineering, , Suita, Osaka 564-8680, Japan
Nagoya University 2 Graduate School of Engineering, , Nagoya, Aichi 464-8603, Japan
Konan University 3 Faculty of Science and Engineering, , Kobe 658-8501, Japan
Nihon University 4 College of Science and Technology, , Chiyoda, Tokyo 101-8308, Japan
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