Experimental study of light output power for vertical GaN-based light-emitting diodes with various textured surface and thickness of GaN layer

The light output power (LOP) of vertical-type GaN-based light emitting diodes (LED) with surface roughness (texture) can be changed by texture size, density, and thickness of GaN film or by the combined effects of texture formation and thickness of GaN film. We have investigated these changes experimentally and note that the enhancement of the LOP by a factor of 2.4 can be improved with optimum texturing parameters as compared to that without texturing. In addition, the LOP of GaN-based LEDs under the same texture density increase slightly as thickness of GaN film decreases. Base on these results, we have evidently demonstrated that the enhancement factors of LOP are related to the correlation between texture size (density) and thickness of GaN film.