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journal article·2015-05-01Open access

Origin of resistivity anomaly in p-type leads chalcogenide multiphase compounds

Sima Aminorroaya Yamini, David R. G. Mitchell, Heng Wang, Zachary M. Gibbs, Yanzhong Pei, Shi Xue Dou, G. Jeffrey Snyder

AIP Advances· Volume 5· Issue 5
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Source abstract

Abstract

The electrical resistivity curves for binary phase compounds of p-type lead chalcogenide (PbTe)(0.9−x)(PbSe)0.1(PbS)x, (x = 0.15, 0.2, 0.25), which contain PbS-rich secondary phases, show different behaviour on heating and cooling between 500-700 K. This is contrast to single phase compounds which exhibit similar behaviour on heating and cooling. We correlate these anomalies in the electrical resistivities of multiphase compounds to the variation in phase composition at high temperatures. The inhomogeneous distribution of dopants between the matrix and secondary phase is found to be crucial in the electronic transport properties of the multiphase compounds. These results can lead to further advances in designing composite Pb-chalcogenides with high thermoelectric performance.
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Research context

Composites

OpenAlex topics: Advanced Thermoelectric Materials and Devices · Chalcogenide Semiconductor Thin Films · Phase-change materials and chalcogenides

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Affiliations

University of Wollongong 1 Australian Institute for Innovative Materials (AIIM), Innovation Campus, , NSW 2500, Australia

University of Wollongong 2 Electron Microscopy Centre (EMC), Australian Institute for Innovative Materials (AIIM), Innovation Campus, , NSW 2500, Australia

California Institute of Technology 3 Materials Science, , Pasadena, CA 91125, USA

California Institute of Technology 4 Division of Chemistry and Chemical Engineering, , Pasadena, CA 91125, USA

Tongji University 5 School of Materials Science and Engineering, , 4800 Caoan Road, Shanghai 201804, China

ITMO University 6 , Saint Petersburg, Russia

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