journal article·2021-11-01Open access

Atomic mass dependency of a localized phonon mode in SiGe alloys

Sylvia Yuk Yee Chung, Motohiro Tomita, Ryo Yokogawa, Atsushi Ogura, Takanobu Watanabe

AIP Advances· Volume 11· Issue 11

Abstract

Using molecular dynamics, the effect of an atomic mass difference on a localized phonon mode in SiGe alloys was investigated. Phonon dispersion relations revealed that a change in atomic mass causes the optical and acoustic modes to shift frequency. The results indicate that the local mode is sensitive to both Si and Ge atomic mass changes; reducing the Si atomic mass shifts the local mode to higher frequencies, and increasing the Ge atomic mass shifts the local mode to lower frequencies. Furthermore, the results suggest that the local mode originates from the Si–Ge bond vibration. Although the Si–Si, Si–Ge, and Ge–Ge optical mode frequencies are well approximated by the two-body harmonic oscillator model, a much heavier effective mass than that of the Si–Ge pair must be assumed to reproduce the local mode frequency. A plausible interpretation of the local mode is a collective vibration of Ge clusters embedded within the Si lattice.
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Research context

OpenAlex topics: Silicon Nanostructures and Photoluminescence · Thermal properties of materials · Semiconductor materials and interfaces

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Faculty of Science and Engineering, Waseda University 1 , Shinjuku, Tokyo 169-8555, Japan

Comprehensive Research Organization, Waseda University 2 , Shinjuku, Tokyo 169-8555, Japan

School of Science and Technology, Meiji University 3 , Kawasaki, Kanagawa 214-8571, Japan

Meiji Renewable Energy Laboratory, Meiji University 4 , 1-1-1 Higashimita, Tama-ku, Kawasaki, Kanagawa 214-8571, Japan

Funding

Core Research for Evolutional Science and Technology

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