The analytical calibration model of temperature effects on a silicon piezoresistive pressure sensor
Source abstract
Abstract
Presently, piezoresistive pressure sensors are highly demanded for using in various microelectronic devices. The electrical behavior of these pressure sensor is mainly dependent on the temperature gradient. In this paper, various factors,which includes effect of temperature, doping concentration on the pressure sensitive resistance, package stress, and temperature on the Young’s modulus etc., are responsible for the temperature drift of the pressure sensor are analyzed. Based on the above analysis, an analytical calibration model of the output voltage of the sensor is proposed and the experimental data is validated through a suitable model.
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Research context
OpenAlex topics: Advanced MEMS and NEMS Technologies · Mechanical and Optical Resonators · Advanced Sensor Technologies Research
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Affiliations
Southeast University Key Laboratory of MEMS of Ministry of Education, , Nanjing 210096, China
Funding
national key technology support program of china · National Natural Science Foundation of China
References (9)
Show source-provided references
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