Effect of band filling on anomalous Hall conductivity and magneto-crystalline anisotropy in NiFe epitaxial thin films
Source abstract
Abstract
The anomalous Hall effect (AHE) and magneto-crystalline anisotropy (MCA) are investigated in epitaxial NixFe1−x thin films grown on MgO (001) substrates. The scattering independent term b of anomalous Hall conductivity shows obvious correlation with cubic magneto-crystalline anisotropy K1. When nickel content x decreasing, both b and K1 vary continuously from negative to positive, changing sign at about x = 0.85. Ab initio calculations indicate NixFe1−x has more abundant band structures than pure Ni due to the tuning of valence electrons (band fillings), resulting in the increased b and K1. This remarkable correlation between b and K1 can be attributed to the effect of band filling near the Fermi surface.
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Research context
OpenAlex topics: Magnetic properties of thin films · ZnO doping and properties · Quantum and electron transport phenomena
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Tongji University 1 Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology & Pohl Institute of Solid State Physics, School of Physics Science and Engineering, , Shanghai 200092, China
Hangzhou Normal University 2 Department of Physics, , Hangzhou 310036, P.R. China
Lanzhou University 3 Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, , Lanzhou 730000, China
Funding
National Natural Science Foundation of China
References (28)
Show source-provided references
1. Rev. Mod. Phys. · 2010 · 82 · 153910.1103/RevModPhys.82.1539 ↗
2. Phys. Rev. Lett. · 2012 · 109 · 06640210.1103/PhysRevLett.109.066402 ↗
3. Phys. Rev. Lett. · 2013 · 110 · 07720310.1103/PhysRevLett.110.077203 ↗
4. J Magn. Magn. Mater. · 1999 · 200 · 49810.1016/S0304-8853(99)00351-0 ↗
5. Phys. Rev. Lett. · 2004 · 92 · 03720410.1103/PhysRevLett.92.037204 ↗
6. Phys. Rev. B · 2011 · 83 · 17441010.1103/PhysRevB.83.174410 ↗
7. J. Appl. Phys. · 2013 · 113 · 20391810.1063/1.4808098 ↗
8. Phys. Rev. Lett. · 2006 · 97 · 06720310.1103/PhysRevLett.97.067203 ↗
9. Phys. Rev. · 1929 · 34 · 146610.1103/PhysRev.34.1466 ↗
10. Phys. Rev. · 1954 · 95 · 115410.1103/PhysRev.95.1154 ↗
11. Physica · 1958 · 24 · 3910.1016/S0031-8914(58)93541-9 ↗
12. Phys. Rev. B · 1970 · 2 · 455910.1103/PhysRevB.2.4559 ↗
13. Phys. Rev. B. · 2012 · 86 · 01440510.1103/PhysRevB.86.014405 ↗
14. Phys. Rev. B · 1994 · 49 · 1510510.1103/PhysRevB.49.15105 ↗
15. Scientific Reports · 2013 · 3 · 214810.1038/srep02148 ↗
16. J. Appl. Phys. · 1968 · 39 · 50410.1063/1.2163505 ↗
17. J. Appl. Phys. · 1976 · 47 · 466910.1063/1.322398 ↗
18. J. Magn. Magn. Mater. · 2002 · 68 · 242
19. J. Appl. Phys. · 1963 · 34 · 119510.1063/1.1729431 ↗
20. 2003
21. IEEE Tran. Magn. · 1975 · 11 · 101810.1109/TMAG.1975.1058782 ↗
22. J Appl. Phys. · 2001 · 90 · 141410.1063/1.1380993 ↗
23. J Appl. Phys. · 2010 · 107 · 09E71510.1063/1.3337739 ↗
24. J. Appl. Phys. · 2015 · 118 · 04390810.1063/1.4927620 ↗
25. Physica · 1955 · 21 · 87710.1016/S0031-8914(55)92596-9 ↗
26. J. Appl. Phys. · 2013 · 114 · 16371410.1063/1.4827198 ↗
27. Phys. Rev. B · 2012 · 85 · 22040310.1103/PhysRevB.85.220403 ↗
28. Phys. Rev. B · 2011 · 84 · 14442710.1103/PhysRevB.84.144427 ↗