Back-end-of-line a-SiOxCy:H dielectrics for resistive memory

Resistive switching of W/amorphous (a)-SiOxCy:H/Cu resistive memories incorporating solely native back-end-of-line (BEOL) materials were studied. A-SiC1.1:H, a-SiO0.9C0.7:H, and a-SiO1.5C0.2:H were exploited as switching layers for resistive memories which all show resistive-switching characteristics with ultrahigh ON/OFF ratios in the range of 106 to 1010. Ohmic conduction in the low resistance state is attributed to the formation of Cu conductive filament inside the a-SiOxCy:H switching layer. Rupture of the conductive filament leads to current conduction dominated by Schottky emission through a-SiOxCy:H Schottky contacts. Comparison of the switching characteristics suggests composition of the a-SiOxCy:H has influences on VFORM and VSET, and current conduction mechanisms. These results demonstrate the capability to achieve functional W/a-SiOxCy:H/Cu using entirely BEOL native materials for future embedded resistive memories.