Radio-frequency oxygen-plasma-enhanced pulsed laser deposition of IGZO films
Source abstract
Abstract
We demonstrate the crystalline structures, optical transmittance, surface and cross-sectional morphologies, chemical compositions, and electrical properties of indium gallium zinc oxide (IGZO)-based thin films deposited on glass and silicon substrates through pulsed laser deposition (PLD) incorporated with radio-frequency (r.f.)-generated oxygen plasma. The plasma-enhanced pulsed laser deposition (PEPLD)-based IGZO thin films exhibited a c-axis-aligned crystalline (CAAC) structure, which was attributed to the increase in Zn-O under high oxygen vapor pressure (150 mTorr). High oxygen vapor pressure (150 mTorr) and low r.f. power (10 W) are the optimal deposition conditions for fabricating IGZO thin films with improved electrical properties.
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Research context
OpenAlex topics: Thin-Film Transistor Technologies · ZnO doping and properties · Ga2O3 and related materials
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Affiliations
Division of Pediatric Surgery, Department of Surgery, Taichung Veterans General Hospital 1 , Taichung, Taiwan , 40705 and , Taipei, Taiwan , 112
Department of Medicine, National Yang-Ming University 1 , Taichung, Taiwan , 40705 and , Taipei, Taiwan , 112
Graduate Program of Optoelectronic Technology, National Chi Nan University 2 , Nantou, Taiwan , 54561
Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University 3 , Nantou, Taiwan , 54561
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