Heteroepitaxial Ge-on-Si by DC magnetron sputtering
Source abstract
Abstract
The growth of Ge on Si(100) by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380°C. Typical Stransky-Krastanov growth is observed at 410°C. At lower temperatures (320°C), films are essentially amorphous with isolated nanocrystallites at the Si-Ge interface. A minor oxygen contamination at the interface, developing after ex-situ oxide removal, is not seen to hinder epitaxy. Compensation of dislocation-induced acceptors in Ge by sputtering from n-doped targets is proposed.
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Research context
OpenAlex topics: Photonic and Optical Devices · Silicon Nanostructures and Photoluminescence · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Friedrich Schiller University 1 Institute of Applied Physics, Abbe Center of Photonics, , Albert-Einstein-Straße 15, 07745 Jena, Germany
Fraunhofer Institute for Mechanics of Materials IWM 3 , Walter-Hülse-Straße 1, 06120 Halle, Germany
Fraunhofer Institute for Applied Optics and Precision Engineering IOF 2 , Albert-Einstein-Str. 7, 07745 Jena, Germany
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