On the low-field Hall coefficient of graphite
Source abstract
Abstract
We have measured the temperature and magnetic field dependence of the Hall coefficient (RH) in three, several micrometer long multigraphene samples of thickness between ∼9 to ∼30 nm in the temperature range 0.1 to 200 K and up to 0.2 T field. The temperature dependence of the longitudinal resistance of two of the samples indicates the contribution from embedded interfaces running parallel to the graphene layers. At low enough temperatures and fields RH is positive in all samples, showing a crossover to negative values at high enough fields and/or temperatures in samples with interfaces contribution. The overall results are compatible with the reported superconducting behavior of embedded interfaces in the graphite structure and indicate that the negative low magnetic field Hall coefficient is not intrinsic of the ideal graphite structure.
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Research context
OpenAlex topics: Graphene research and applications · Advancements in Battery Materials · Graphite, nuclear technology, radiation studies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Division of Superconductivity and Magnetism, Institut für Experimentelle Physik II, Universität Leipzig 1 , Linnéstraße 5, D-04103 Leipzig, Germany
Hochfeld-Magnetlabor, Helmholtz-Zentrum Dresden-Rossendorf 2 , Germany
Laboratorio de Física de Sistemas Pequeños y Nanotecnología, Consejo Superior de Investigaciones Científicas 3 , E-28006 Madrid, Spain
Funding
EuroMagNet II
References (55)
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