journal article·2014-04-01Open access

Zinc vacancy and erbium cluster jointly promote ferromagnetism in erbium-doped ZnO thin film

Hong-Ming Chen, Xue-Chao Liu, Shi-Yi Zhuo, Ze Xiong, Ren-Wei Zhou, Fei Li, Er-Wei Shi

AIP Advances· Volume 4· Issue 4

Abstract

Zn1-xErxO (0.005 ≤ x ≤ 0.04) thin films have been prepared by inductively coupled plasma enhanced physical vapor deposition method. Ferromagnetism, crystal structure, microstructure and photoluminescence properties of the films were characterized. It is found that the chemical valence state of Er is trivalent, and the Er3+ cations play an important role in ferromagnetism. Both saturated magnetization (Ms) and zinc vacancy (VZn) are decreased with the increase of x from 0.005 to 0.03. However, further increasing x to 0.04, the Ms is quenched due to the generation of Er clusters. It reveals that the intensity of Ms is not only associated with the VZn concentration, but also related to the Er clusters. The VZn concentration and the Er clusters can jointly boost the ferromagnetism in the Zn1-xErxO thin films.
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Research context

OpenAlex topics: ZnO doping and properties · Ga2O3 and related materials · Copper-based nanomaterials and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Chinese Academy of Sciences 1 Shanghai Institute of Ceramics, , 215 Chengbei Road, Shanghai 201800, People's Republic of China

University of Chinese Academy of Sciences 2 , Beijing 100049, People's Republic of China

The University of Hong Kong 3 Department of Chemistry, , Pokfulam Road, Hong Kong, China

Funding

NNSFC

References (26)

Show source-provided references
1. Phys. Rev. Lett. · 2010 · 105 · 20720110.1103/PhysRevLett.105.207201 ↗
2. Appl. Phys. Lett. · 2011 · 98 · 250210.1063/1.3561775 ↗
3. J. Alloy. Compd. · 2009 · 477 · 37910.1016/j.jallcom.2008.10.005 ↗
4. Science · 2000 · 287 · 101910.1126/science.287.5455.1019 ↗
5. Nat. Mater. · 2010 · 9 · 96510.1038/nmat2898 ↗
6. A. Phys. Rev. B · 2005 · 72 · 04533610.1103/PhysRevB.72.045336 ↗
7. Adv. Mater. · 2007 · 19 · 292510.1002/adma.200602215 ↗
8. Appl. Phys. Lett. · 2011 · 98 · 05250310.1063/1.3549696 ↗
9. Appl. Phys. Lett. · 2007 · 90 · 24250810.1063/1.2748343 ↗
10. Thin Solid Films · 2005 · 486 · 11710.1016/j.tsf.2004.11.211 ↗
11. Scr. Mater. · 2009 · 60 · 28910.1016/j.scriptamat.2008.10.015 ↗
12. Appl. Phys. A-Mater. Sci. Process. · 2010 · 100 · 7910.1007/s00339-010-5796-8 ↗
13. J. Cryst. Growth · 2006 · 296 · 13510.1016/j.jcrysgro.2006.08.034 ↗
14. PHYSICA E · 2010 · 42 · 171310.1016/j.physe.2010.01.029 ↗
15. Dalton Trans. · 2014 · 43 · 197410.1039/c3dt52515e ↗
16. Superlattices Microstruct. · 2011 · 50 · 70310.1016/j.spmi.2011.09.012 ↗
17. Appl. Phys. Lett. · 2011 · 98 · 16111010.1063/1.3579140 ↗
18. Appl. Phys. Lett. · 2011 · 99 · 05251310.1063/1.3624589 ↗
19. J. Cryst. Growth · 2003 · 259 · 13010.1016/j.jcrysgro.2003.07.007 ↗
20. Phys. Rev. B · 2000 · 61 · 1501910.1103/PhysRevB.61.15019 ↗
21. J PHYS CHEM C · 2010 · 114 · 1347710.1021/jp103458s ↗
22. Appl. Phys. Lett. · 2009 · 95 · 07250110.1063/1.3206654 ↗
23. Applied Physics A · 2010 · 99 · 95510.1007/s00339-010-5703-3 ↗
24. AIP Advances · 2013 · 3 · 08212110.1063/1.4819455 ↗
25. Adv. Mater. · 2011 · 23 · 163510.1002/adma.201004519 ↗
26. Nat. Mater. · 2005 · 4 · 17310.1038/nmat1310 ↗