Oxides formation on hydrophilic bonding interface in plasma-assisted InP/Al2O3/SOI direct wafer bonding
Source abstract
Abstract
Successful direct wafer bonding between InP and silicon-on-insulator (SOI) wafers has been demonstrated by adopting a 20-nm-thick Al2O3 as the intermediate layer. A detailed investigation on the property of the bonding interface is carried out. Water contact angle test reveals an improved hydrophilicity for both the InP and the Al2O3/SOI wafers after oxygen plasma surface activation. X-ray photoelectron spectroscopy is employed to characterize the bonding interface before and after the wafer bonding process. It is found that oxides are formed on the bonding interface during bonding, which helps ensure high quality hydrophilic bonding.
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Research context
OpenAlex topics: 3D IC and TSV technologies · Semiconductor materials and devices · Semiconductor materials and interfaces
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Tsinghua University Tsinghua National Laboratory for Information Science and Technology, State Key Lab on Integrated Optoelectronics, Department of Electronic Engineering, , Beijing 100084, China
Funding
National Natural Science Foundation of China
References (24)
Show source-provided references
1. Mater. Today · 2007 · 10 · 2810.1016/S1369-7021(07)70177-3 ↗
2. IEEE J. Sel. Top. Quantum Electron. · 1997 · 3 · 94310.1109/2944.640648 ↗
3. Appl. Phys. Lett. · 2010 · 96 · 10211010.1063/1.3360201 ↗
4. Materials · 2010 · 3 · 178210.3390/ma3031782 ↗
5. IEEE. J. Sel. Top. Quantum Electron. · 2014 · 20 · 6100213
6. Appl. Phys. Lett. · 2014 · 104 · 04110410.1063/1.4863223 ↗
7. Photon. Res. · 2015 · 3 · 28910.1364/PRJ.3.000289 ↗
8. Microsyst Technol · 2015 · 21 · 163310.1007/s00542-014-2242-4 ↗
9. Journal of Applied Physics. · 2006 · 99 · 03110110.1063/1.2168512 ↗
10. Appl. Phys. Lett. · 1996 · 68 · 222210.1063/1.115865 ↗
11. IEEE J. Sel. Top. Quantum Electron. · 2002 · 8 · 11810.1109/2944.991407 ↗
12. Appl. Surf. Sci. · 2006 · 253 · 124310.1016/j.apsusc.2006.01.071 ↗
13. J. Electron. Mater. · 2008 · 37 · 155210.1007/s11664-008-0489-1 ↗
14. Microsyst Technol. · 2015 · 21 · 101510.1007/s00542-015-2432-8 ↗
15. J. Vac. Sci. Technol. B · 2008 · 26 · 156010.1116/1.2943667 ↗
16. Annu. Rev. Mater. Sci. · 1998 · 28 · 21510.1146/annurev.matsci.28.1.215 ↗
17. J. Vac. Sci. Technol. B · 1996 · 14 · 309510.1116/1.589070 ↗
18. J. Electrochem. Soc. · 1997 · 144 · 110610.1149/1.1837540 ↗
19. J. Electrochem. Soc. · 2009 · 156 · H30710.1149/1.3089363 ↗
20. J. Micromech. Microeng. · 2014 · 24 · 03501010.1088/0960-1317/24/3/035010 ↗
21. 1998 · 46
22. J. Electrochem. Soc. · 1997 · 144 · 38410.1149/1.1837415 ↗
23. Journal of Microelectromechanical Systems. · 2005 · 14 · 36810.1109/jmems.2004.839027 ↗
24. Microsystems. Adv. Mater. · 1999 · 11 · 140910.1002/(SICI)1521-4095(199912)11:17<1409::AID-ADMA1409>3.0.CO;2-W ↗