Energy-filtering-induced high power factor in PbS-nanoparticles-embedded TiS2
Source abstract
Abstract
We report on a greatly enhanced power factor for 1%PbS-nanoparticle-embedded TiS2 bulk ceramic, about 1 mW/(mK2) at 300 K and 1.23 mW/(mK2) in a wide temperature range of 573 ∼ 673 K, of which the latter is among the highest so far for TiS2-based thermoelectric materials. Compared to TiS2, the power factor is increased by ∼110% at 300 K and (50 ∼ 35)% at 573 ∼ 673 K. This enhancement is derived from a large increase in Seebeck coefficient which overwhelmed the modest degradation of electrical conductivity, which should be attributed to energy filtering induced by the band gap offset between TiS2 and PbS.
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Research context
OpenAlex topics: Advanced Thermoelectric Materials and Devices · Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties
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Affiliations
Nanjing Tech University 1 College of Materials Science and Engineering, , Nanjing 210009, China
Nanjing Tech University 2 State Key Laboratory of Materials-Oriented Chemical Engineering, , Nanjing 210009, China
East China Normal University 3 School of Information Science and Technology, , Shanghai 200062, China
Wuhan University of Technology 4 State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, , Wuhan 430070, China
Funding
National Natural Science Foundation of China
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