journal article·2014-06-01Open access

A comparison between semi-spheroid- and dome-shaped quantum dots coupled to wetting layer

Mohammadreza Shahzadeh, Mohammad Sabaeian

AIP Advances· Volume 4· Issue 6

Abstract

During the epitaxial growth method, self-assembled semi-spheroid-shaped quantum dots (QDs) are formed on the wetting layer (WL). However for sake of simplicity, researchers sometimes assume semi-spheroid-shaped QDs to be dome-shaped (hemisphere). In this work, a detailed and comprehensive study on the difference between electronic and transition properties of dome- and semi-spheroid-shaped quantum dots is presented. We will explain why the P-to-S intersubband transition behaves the way it does. The calculated results for intersubband P-to-S transition properties of quantum dots show two different trends for dome-shaped and semi-spheroid-shaped quantum dots. The results are interpreted using the probability of finding electron inside the dome/spheroid region, with emphasis on the effects of wetting layer. It is shown that dome-shaped and semi-spheroid-shaped quantum dots feature different electronic and transition properties, arising from the difference in lateral dimensions between dome- and semi-spheroid-shaped QDs. Moreover, an analogy is presented between the bound S-states in the quantum dots and a simple 3D quantum mechanical particle in a box, and effective sizes are calculated. The results of this work will benefit researchers to present more realistic models of coupled QD/WL systems and explain their properties more precisely.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Semiconductor Quantum Structures and Devices · Quantum Dots Synthesis And Properties · Quantum and electron transport phenomena

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Shahid Chamran University of Ahvaz Physics Department, Faculty of Science, , Ahvaz, 61357-43135, Iran

References (87)

Show source-provided references
1. Size-tunable, bright, and stable PbS quantum dots: a surface chemistry study10.1021/nn103050w ↗
2. Size tunable visible and near-infrared photoluminescence from vertically etched silicon quantum dots10.1063/1.3580768 ↗
3. Long lifetimes of quantum-dot intersublevel transitions in the terahertz range10.1038/nmat2511 ↗
4. Strong coupling in a single quantum dot–semiconductor microcavity system10.1038/nature02969 ↗
5. Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate10.1038/nphoton.2011.120 ↗
6. Terahertz quantum-cascade lasers10.1038/nphoton.2007.166 ↗
7. The conduction band absorption spectrum of interdiffused InGaAs/GaAs quantum dot infrared photodetectors10.1063/1.4729833 ↗
8. Photodetectors: A sensitive pair10.1038/nnano.2012.98 ↗
9. Nanostructured materials for photon detection10.1038/nnano.2010.78 ↗
10. A pilot study in non-human primates shows no adverse response to intravenous injection of quantum dots10.1038/nnano.2012.74 ↗
11. One-step DNA-programmed growth of luminescent and biofunctionalized nanocrystals10.1038/nnano.2008.373 ↗
12. A gallium nitride single-photon source operating at 200 K10.1038/nmat1763 ↗
13. A highly efficient single-photon source based on a quantum dot in a photonic nanowire10.1038/nphoton.2009.287 ↗
14. Controlling the influence of Auger recombination on the performance of quantum-dot light-emitting diodes
15. Colloidal quantum dot solar cells10.1038/nphoton.2012.33 ↗
16. Properties of wetting layer states in low density InAs quantum dot nanostructures emitting at 1.3 μm: Effects of InGaAs capping10.1063/1.3518049 ↗
17. The role of wetting layer states on the emission efficiency of InAs/InGaAs metamorphic quantum dot nanostructures10.1088/0957-4484/20/27/275703 ↗
18. Effect of wetting layers on the strain and electronic structure of InAs self-assembled quantum dots10.1103/PhysRevB.70.125307 ↗
19. Size dependent carrier thermal escape and transfer in bimodally distributed self assembled InAs/GaAs quantum dots10.1063/1.4729315 ↗
20. Modified droplet epitaxy GaAs/AlGaAs quantum dots grown on a variable thickness wetting layer10.1016/S0022-0248(03)01016-9 ↗
21. Role of the wetting layer in the carrier relaxation in quantum dots10.1063/1.1495525 ↗
22. Energy states and carrier transport processes in metamorphic InAs quantum dots10.1063/1.4744981 ↗
23. Quantum computing: Fine lines from dots10.1038/nmat777 ↗
24. Impacts of wetting layer and excited state on the modulation response of quantum-dot lasers10.1109/JQE.2012.2205224 ↗
25. Interference effects on bound-to-continuum quantum dot absorption10.1063/1.3385313 ↗
26. Intraband absorption for InAs/GaAs quantum dot infrared photodetectors10.1063/1.1687459 ↗
27. Erratum:”Intraband absorption for InAs/GaAs quantum dot infrared photodetectors” [Appl. Phys. Lett. 84, 1934 (2004)]10.1063/1.1827347 ↗
28. Midinfrared absorption and photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots10.1063/1.1365411 ↗
29. Comparison of intraband absorption and photocurrent in InAs/GaAs quantum dots10.1063/1.1592892 ↗
30. Tuning of intraband absorption and photoresponse in self-assembled InAs/GaAs quantum dots by thermal annealing10.1063/1.2875242 ↗
31. Probing the band structure of InAs/GaAs quantum dots by capacitance-voltage and photoluminescence spectroscopy10.1063/1.2920439 ↗
32. Linear and nonlinear optical properties of a hydrogenic donor in lens-shaped quantum dots10.1016/j.physleta.2009.06.042 ↗
33. A study of nonlinear optical properties of a negative donor quantum dot10.1016/j.optcom.2011.05.033 ↗
34. Nonlinear optical properties of a two-dimensional elliptic quantum dot10.1016/j.physe.2009.11.122 ↗
35. Nonlinear optical properties of a hydrogenic impurity in an ellipsoidal finite potential quantum dot10.1016/j.cap.2010.07.002 ↗
36. Polarization dependence of absorption by bound electrons in self-assembled quantum dots10.1063/1.4805061 ↗
37. Modeling of the quantum dot filling and the dark current of quantum dot infrared photodetectors10.1063/1.4864762 ↗
38. Modeling light absorption by bound electrons in self-assembled quantum dots10.1063/1.4793269 ↗
39. Natural quantum dots in the InAs/GaAs wetting layer10.1063/1.2918836 ↗
40. Intersublevel transitions in self-assembled quantum dots10.1016/j.crhy.2008.10.005 ↗
41. Linear and nonlinear intersubband optical properties of Si quantum dot embedded in oxide, nitride, and carbide matrix10.1063/1.3665687 ↗
42. Transverse-electric-field-enhanced response in InAs/AlGaAs/GaAs quantum-dot infrared photodetectors10.1063/1.1929881 ↗
43. Calculation of conduction-to-conduction and valence-to-valence transitions between bound states in (In, Ga) As/GaAs quantum dots10.1103/PhysRevB.75.085306 ↗
44. Response spectra from mid-to far-infrared, polarization behaviors, and effects of electron numbers in quantum-dot photodetectors10.1063/1.1540728 ↗
45. Infrared second-order optical susceptibility in InAs/GaAs self-assembled quantum dots10.1103/PhysRevB.61.5562 ↗
46. In-plane polarized intraband absorption in InAs/GaAs self-assembled quantum dots10.1103/PhysRevB.58.10562 ↗
47. Second-harmonic generation resonant with sp transition in InAs/GaAs self-assembled quantum dots10.1103/PhysRevB.63.113312 ↗
48. Infrared photodetection with semiconductor self-assembled quantum dots10.1016/j.crhy.2003.10.020 ↗
49. Self-assembled strained pyramid-shaped InAs/GaAs quantum dots: the effects of wetting layer thickness on discrete and quasi-continuum levels10.1016/j.physe.2014.03.015 ↗
50. Size-dependent intersubband optical properties of dome-shaped InAs/GaAs quantum dots with wetting layer10.1364/AO.51.004176 ↗
51. Intraband optical transition in InGaAs/GaAs pyramidal quantum dots10.1063/1.4790870 ↗
52. The inter-sublevel optical properties of a spherical quantum dot-quantum well with and without a donor impurity10.1063/1.4751483 ↗
53. Calculation of metamorphic two-dimensional quantum energy system: Application to wetting layer states in InAs/InGaAs metamorphic quantum dot nanostructures10.1063/1.4830021 ↗
54. The energy level spacing from InAs/GaAs quantum dots: Its relation to the emission wavelength, carrier lifetime, and zero dimensionality10.1063/1.2192146 ↗
55. Effect of thermal annealing on the hyperfine interaction in InAs/GaAs quantum dots10.1103/PhysRevB.78.045315 ↗
56. Transport and photodetection in self-assembled semiconductor quantum dots10.1088/0957-4484/16/2/007 ↗
57. Low density GaAs/AlGaAs quantum dots grown by modified droplet epitaxy10.1063/1.1791756 ↗
58. Phonon sideband recombination kinetics in single quantum dots10.1063/1.2948932 ↗
59. Size, shape, composition, and electronic properties of InAs/GaAs quantum dots by scanning tunneling microscopy and spectroscopy10.1063/1.3518680 ↗
60. Midinfrared second-harmonic generation in p-type InAs/GaAs self-assembled quantum dots10.1063/1.124529 ↗
61. Theoretical interpretation of the experimental electronic structure of lens-shaped self-assembled InAs/GaAs quantum dots10.1103/PhysRevB.62.12963 ↗
62. Impact of size, shape, and composition on piezoelectric effects and electronic properties of In (Ga) As/GaAs quantum dots10.1103/PhysRevB.76.205324 ↗
63. Shape transition of germanium nanocrystals on a silicon (001) surface from pyramids to domes10.1126/science.279.5349.353 ↗
64. Room temperature operation of InGaAs/InGaAsP/InP quantum dot lasers10.1063/1.1812365 ↗
65. Self-assembled InAs quantum dots on patterned GaAs (001) substrates: Formation and shape evolution10.1063/1.2143125 ↗
66. Interplay between thermodynamics and kinetics in the capping of InAs/GaAs (001) quantum dots10.1103/PhysRevLett.96.226106 ↗
67. Strain and band-mixing effects on the excitonic Aharonov-Bohm effect in In (Ga) As/GaAs ringlike quantum dots10.1103/PhysRevB.87.085314 ↗
68. Influence of wetting-layer wave functions on phonon-mediated carrier capture into self-assembled quantum dots10.1103/PhysRevB.74.195342 ↗
69. Intraband transitions in quantum dot–superlattice heterostructures10.1103/PhysRevB.72.155310 ↗
70. Generalized effective-mass theory of subsurface scanning tunneling microscopy: Application to cleaved quantum dots10.1103/PhysRevB.82.195304 ↗
71. Efficient method for calculating electronic states in self-assembled quantum dots10.1103/PhysRevB.68.235308 ↗
72. Effects of size and shape on electronic states of quantum dots10.1103/PhysRevB.74.245331 ↗
73. Proposal for ultra-high performance infrared quantum dot10.1364/OE.16.002752 ↗
74. High performances III-Nitride quantum dot infrared photodetector operating at room temperature10.1364/OE.18.014604 ↗
75. Effective-mass theory for InAs/GaAs strained coupled quantum dots10.1103/PhysRevB.54.11575 ↗
76. Tuning the exciton binding energies in single self-assembled InGaAs/GaAs quantum dots by piezoelectric-induced biaxial stress10.1103/PhysRevLett.104.067405 ↗
77. Intraband absorption in InAs/GaAs quantum dot infrared photodetectors—effective mass versus k × p modelling10.1088/0268-1242/21/8/021 ↗
78. Electronic structure of InAs/GaAs self-assembled quantum dots10.1103/PhysRevB.54.R2300 ↗
79. Electron and hole effective masses in self-assembled quantum dots10.1140/epjb/e2009-00098-2 ↗
80. Finite element analysis of coupled electronic states in quantum dot nanostructures10.1088/0965-0393/12/3/008 ↗
81. Single InAs quantum dot coupled to different “environments” in one wafer for quantum photonics10.1063/1.4807502 ↗
82. 2008
83. Resonant coupling of quantum dot intersublevel transitions with midinfrared photonic crystal modes10.1063/1.3189812 ↗
84. Control of polarization and dipole moment in low-dimensional semiconductor nanostructures10.1063/1.3269592 ↗
85. Polarization-sensitive nanowire photodetectors based on solution-synthesized CdSe quantum-wire solids10.1021/nl0713023 ↗
86. Polarization dependence study of electroluminescence and absorption from InAs/GaAs columnar quantum dots10.1063/1.2811720 ↗
87. Experimental and theoretical study of polarization-dependent optical transitions in InAs quantum dots at telecommunication-wavelengths (1300–1500 nm)10.1063/1.3587167 ↗