Dual-color short-wavelength infrared photodetector based on InGaAsSb/GaSb heterostructure
Source abstract
Abstract
We report the spectral response characteristics of a dual–band infrared photodetector based on nBn photodiode configuration–with GaSb and InGaAsSb absorption layers and a ternary layer of AlGaSb that serves as unipolar barrier in between—which has independent access to both sides. The resulting structure has detection capability in the short-wavelength infrared ranges, cut-off wavelength of 1.6 μm (SWIR1; GaSb) and 2.65 μm (SWIR2; InGaAsSb) depending on the applied bias. The dual-band photodetector was evaluated by current–voltage (I–V) characteristics, spectral response, and detectivity (D*). The measured values of D* at 300 K were 2.3 × 1012 cm·Hz1/2·W−1 (at 1.5 μm) and 2.1 × 1011 cm·Hz1/2·W−1 (at 2.25 μm).
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Advanced Semiconductor Detectors and Materials · Semiconductor Quantum Structures and Devices · Thermography and Photoacoustic Techniques
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Division of Industrial Metrology, Korean Research Institute of Standards and Science 1 , Daejeon, Republic of Korea , 305–340
Department of Materials Science & Engineering, Chungnam National University 2 , Daejeon, Republic of Korea , 305–764
Institute of Materials Science, Vietnam Academy of Science and Technology 3 , Hanoi, Vietnam
Funding
Korea Research Institute of Standards and Science · MOTIE | Korea Evaluation Institute of Industrial Technology
References (17)
Show source-provided references
1. Opto-Electron. Rev. · 2014 · 22 · 12710.2478/s11772-014-0187-x ↗
2. J. Appl. Phys. · 1987 · 61 · 486910.1063/1.338352 ↗
3. Sci. Rep. · 2017 · 7 · 337910.1038/s41598-017-03238-2 ↗
4. Betta · 2011 · 34910.5772/588 ↗
5. C. R. Physique · 2003 · 4 · 62110.1016/s1631-0705(03)00098-7 ↗
6. Opto-Electron. Rev. · 2013 · 21 · 23910.2478/s11772-013-0090-x ↗
7. Appl. Phys. Lett. · 2015 · 106 · 20110310.1063/1.4921468 ↗
8. IEEE J. Quantum Electr. · 2011 · 47 · 124410.1109/jqe.2011.2160450 ↗
9. 2010 · 36710.1007/978-1-4419-1056-1_10 ↗
10. Sci. Rep. · 2016 · 6 · 2414410.1038/srep24144 ↗
11. Appl. Phys. Lett. · 2006 · 89 · 15110910.1063/1.2360235 ↗
12. Infrared Phys. Techn. · 2013 · 59 · 15210.1016/j.infrared.2012.12.031 ↗
13. Appl. Phys. Lett. · 2009 · 95 · 10210610.1063/1.3212738 ↗
14. Proc. SPIE · 2006 · 6297 · 62970910.1117/12.680969 ↗
15. Semicond. Sci. Technol. · 2006 · 21 · 26710.1088/0268-1242/21/3/009 ↗
16. Appl. Phys. Lett. · 2015 · 106 · 17350510.1063/1.4919450 ↗
17. J. Cryst. Growth · 2011 · 334 · 10310.1016/j.jcrysgro.2011.08.030 ↗