journal article·2017-12-01Open access

A real-time Raman spectroscopy study of the dynamics of laser-thinning of MoS2 flakes to monolayers

Enyao Gu, Qiyuan Wang, Youwei Zhang, Chunxiao Cong, Laigui Hu, Pengfei Tian, Ran Liu, Shi-Li Zhang, Zhi-Jun Qiu

AIP Advances· Volume 7· Issue 12

Abstract

Transition metal dichalcogenides (TMDCs) in monolayer form have attracted a great deal of attention for electronic and optical applications. Compared to mechanical exfoliation and chemical synthesis, laser thinning is a novel and unique “on-demand” approach to fabricate monolayers or pattern desired shapes with high controllability and reproducibility. Its successful demonstration motivates a further exploration of the dynamic behaviour of this local thinning process. Here, we present an in-situ study of void formation by laser irradiation with the assistance of temporal Raman evolution. In the analysis of time-dependent Raman intensity, an empirical formula relating void size to laser power and exposure time is established. Void in thinner MoS2 flakes grows faster than in thicker ones as a result of reduced sublimation temperature in the two-dimensional (2D) materials. Our study provides useful insights into the laser-thinning dynamics of 2D TMDCs and guidelines for an effective control over the void formation.
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Research context

OpenAlex topics: 2D Materials and Applications · Perovskite Materials and Applications · Advanced Memory and Neural Computing

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of ASIC & System, School of Information Science and Technology, Fudan University 1 , Shanghai 200433, China

Solid-State Electronics, The Ångström Laboratory, Uppsala University 2 , Uppsala SE-751 21, Sweden

Funding

National Natural Science Foundation of China

References (34)

Show source-provided references
1. Chem. Rev. · 2013 · 113 · 376610.1021/cr300263a ↗
2. Phys. Rev. X · 2013 · 3 · 03100210.1103/physrevx.3.031002 ↗
3. Nanotechnology · 2016 · 27 · 46200110.1088/0957-4484/27/46/462001 ↗
4. Adv. Funct. Mater. · 2013 · 23 · 395210.1002/adfm.201300125 ↗
5. Nat. Nanotechnol. · 2012 · 7 · 69910.1038/nnano.2012.193 ↗
6. Phys. Rev. B · 2001 · 64 · 23530510.1103/physrevb.64.235305 ↗
7. Phys. B · 2011 · 406 · 225410.1016/j.physb.2011.03.044 ↗
8. Nano Lett · 2014 · 14 · 462810.1021/nl501659n ↗
9. Small · 2012 · 8 · 299410.1002/smll.201201224 ↗
10. Small · 2012 · 8 · 6310.1002/smll.201101016 ↗
11. Nano Lett · 2013 · 13 · 366410.1021/nl401544y ↗
12. Chem. Commun. · 2013 · 49 · 183810.1039/c3cc38780a ↗
13. Adv. Mater. · 2011 · 23 · 64010.1002/adma.201003560 ↗
14. Acc. Chem. Res. · 2014 · 47 · 106710.1021/ar4002312 ↗
15. Science · 2004 · 306 · 66610.1126/science.1102896 ↗
16. RSC Adv. · 2012 · 2 · 1169510.1039/c2ra21719h ↗
17. Angew. Chem. Int Ed. · 2011 · 50 · 1109310.1002/anie.201106004 ↗
18. Acta Phys. Sinica · 2016 · 65 · 12810110.7498/aps.65.128101 ↗
19. Surf. Sci. · 2010 · 604 · 8410.1016/j.susc.2009.10.014 ↗
20. Small · 2012 · 8 · 226410.1002/smll.201200044 ↗
21. ACS Appl. Mater. Interfaces · 2015 · 7 · 1589210.1021/acsami.5b03491 ↗
22. J. Korean Phys. Soc. · 2016 · 69 · 149710.3938/jkps.69.1497 ↗
23. Nano Lett · 2012 · 12 · 318710.1021/nl301164v ↗
24. Carbon · 2016 · 109 · 17310.1016/j.carbon.2016.08.005 ↗
25. ACS Nano · 2011 · 5 · 26310.1021/nn1026438 ↗
26. Sci. Rep. · 2015 · 5 · 1166210.1038/srep11662 ↗
27. ACS Nano · 2012 · 6 · 7410.1021/nn2024557 ↗
28. ACS Nano · 2010 · 4 · 269510.1021/nn1003937 ↗
29. Sci. Rep. · 2016 · 6 · 1957110.1038/srep19571 ↗
30. ACS Appl. Mater. Interfaces · 2016 · 8 · 297410.1021/acsami.5b09382 ↗
31. Appl. Phys. Lett. · 2008 · 92 · 04312110.1063/1.2838745 ↗
32. Nano Lett · 2008 · 8 · 196510.1021/nl0808684 ↗
33. Nano Res. · 2013 · 6 · 70310.1007/s12274-013-0346-2 ↗
34. J. Phys. Chem. Lett. · 2015 · 6 · 77310.1021/acs.jpclett.5b00043 ↗