journal article·2017-10-01Open access

Effect of thermal annealing on structural properties of GeSn thin films grown by molecular beam epitaxy

Z. P. Zhang, Y. X. Song, Y. Y. Li, X. Y. Wu, Z. Y. S. Zhu, Y. Han, L. Y. Zhang, H. Huang, S. M. Wang

AIP Advances· Volume 7· Issue 10

Abstract

GeSn alloy with 7.68% Sn concentration grown by molecular beam epitaxy has been rapidly annealed at different temperatures from 300°C to 800°C. Surface morphology and roughness annealed below or equal to 500°C for 1 min have no obvious changes, while the strain relaxation rate increasing. When the annealing temperature is above or equal to 600°C, significant changes occur in surface morphology and roughness, and Sn precipitation is observed at 700°C. The structural properties are analyzed by reciprocal space mapping in the symmetric (004) and asymmetric (224) planes by high resolution X-ray diffraction. The lateral correlation length and the mosaic spread are extracted for the epi-layer peaks in the asymmetric (224) diffraction. The most suitable annealing temperature to improve both the GeSn lattice quality and relaxation rate is about 500°C.
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Research context

OpenAlex topics: Photonic and Optical Devices · Semiconductor Lasers and Optical Devices · Advanced Photonic Communication Systems

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 1 , Shanghai 200050, China

School of Physical Science and Technology, ShanghaiTech University 2 , Shanghai 201210, China

University of Chinese Academy of Sciences, Chinese Academy of Sciences 3 , Beijing 100190, China

State Key Laboratory of Advanced Optical Communication Systems and Networks, Shanghai Key Laboratory on Navigation and Location-Based Service and Center of Quantum Information Sensing and Processing, Shanghai Jiao Tong University 5 , Shanghai 200240, China

Department of Microtechnology and Nanoscience, Chalmers University of Technology 4 , Gothenburg 41296, Sweden

Funding

Creative Research Group Project of Natural Science Foundation of China · National Natural Science Foundation of China

References (30)

Show source-provided references
1. Prog. Cryst. Growth Charact. Mater. · 2016 · 62 · 110.1016/j.pcrysgrow.2015.11.001 ↗
2. Nat. Photonics · 2015 · 9 · 8810.1038/nphoton.2014.321 ↗
3. J. Appl. Phys. · 2013 · 113 · 07370710.1063/1.4792649 ↗
4. Appl. Phys. Lett. · 2014 · 105 · 15110910.1063/1.4898597 ↗
5. IEEE Trans. Electron Devices · 2017 · 64 · 249810.1109/ted.2017.2695664 ↗
6. IEEE Electron Device Lett. · 2013 · 34 · 83110.1109/led.2013.2259573 ↗
7. IEEE Electron Device Lett. · 2016 · 37 · 701
8. ECS J. Solid State Sci. Technol. · 2012 · 2 · N3510.1149/2.039301jss ↗
9. IEEE Electron Device Lett. · 2013 · 34 · 33910.1109/led.2012.2236880 ↗
10. Appl. Phys. Lett. · 2011 · 99 · 18112510.1063/1.3658632 ↗
11. Surf. Sci. · 1998 · 411 · 18610.1016/s0039-6028(98)00363-x ↗
12. J. Cryst. Growth · 2011 · 317 · 4310.1016/j.jcrysgro.2011.01.015 ↗
13. ECS Trans. · 2014 · 64 · 89510.1149/06406.0895ecst ↗
14. J. Cryst. Growth · 2017 · 473 · 2010.1016/j.jcrysgro.2017.05.006 ↗
15. Appl. Phys. Lett. · 2011 · 99 · 15210310.1063/1.3645620 ↗
16. Thin Solid Films · 2012 · 520 · 321110.1016/j.tsf.2011.10.119 ↗
17. Appl. Phys. Lett. · 2013 · 102 · 05210610.1063/1.4790302 ↗
18. Thin Solid Films · 2014 · 557 · 16910.1016/j.tsf.2013.10.064 ↗
19. Thin Solid Films · 2012 · 520 · 320110.1016/j.tsf.2011.10.153 ↗
20. AIP Adv. · 2017 · 7 · 04521110.1063/1.4982245 ↗
21. ECS Trans. · 2013 · 58 · 14910.1149/05809.0149ecst ↗
22. J. Vac. Sci. Technol. B · 2017 · 35 · 02120510.1116/1.4975149 ↗
23. Mater. Sci. Semicond. Process. · 2017 · 57 · 4810.1016/j.mssp.2016.09.040 ↗
24. Appl. Phys. Lett. · 2013 · 102 · 25190710.1063/1.4812490 ↗
25. J. Appl. Phys. · 2016 · 120 · 14530310.1063/1.4964692 ↗
26. ECS Solid State Lett. · 2014 · 3 · P12710.1149/2.0071410ssl ↗
27. ACS Photonics · 2015 · 2 · 153910.1021/acsphotonics.5b00372 ↗
28. Chem. Mater. · 2014 · 26 · 603310.1021/cm502988y ↗
29. J. Cryst. Growth · 2000 · 209 · 58110.1016/s0022-0248(99)00634-x ↗
30. Phys. Rev. B · 1999 · 59 · 124210.1103/physrevb.59.1242 ↗