Light-controlled resistive switching of ZnWO4 nanowires array
Source abstract
Abstract
ZnWO4 nanowires array was prepared on the titanium substrate by a facile hydrothermal synthesis, in which the average length of ZnWO4 nanowires is about 2um and the diameter of individual ZnWO4 nanowire ranges from 50 to 70 nm. The bipolar resistive switching effect of ZnWO4 nanowires array was observed. Moreover, the performance of the resistive switching device is greatly improved under white light irradiation compared with that in the dark.
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Research context
OpenAlex topics: Advanced Memory and Neural Computing · Transition Metal Oxide Nanomaterials · Gas Sensing Nanomaterials and Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Southwest University 1 School of Physics Science and Technology, , Chongqing 400715, China
Southwest University 2 Institute for Clean Energy & Advanced Materials (ICEAM), , Chongqing 400715, China
Funding
NSFC
References (30)
Show source-provided references
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