journal article·2012-12-01Open access

High-quality single crystalline NiO with twin phases grown on sapphire substrate by metalorganic vapor phase epitaxy

Kazuo Uchida, Ken-ichi Yoshida, Dongyuan Zhang, Atsushi Koizumi, Shinji Nozaki

AIP Advances· Volume 2· Issue 4

Abstract

High-quality single crystalline twin phase NiO grown on sapphire substrates by metalorganic vapor phase epitaxy is reported. X-ray rocking curve analysis of NiO films grown at different temperatures indicates a minimum full width at half maximum of the cubic (111) diffraction peak of 0.107° for NiO film grown at as low as 550 °C. Detailed microstructural analysis by Φ scan X-ray diffraction and transmission electron microscopy reveal that the NiO film consists of large single crystalline domains with two different crystallographic orientations which are rotated relative to each other along the [111] axis by 60°. These single crystal domains are divided by the twin phase boundaries.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Transition Metal Oxide Nanomaterials · ZnO doping and properties · Ga2O3 and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

The University of Electro-Communications Department of Engineering Science, Graduate School of Informatics and Engineering, , 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan

References (12)

Show source-provided references
1. Phys. Rev. · 1954 · 93 · 119910.1103/PhysRev.93.1199 ↗
2. Phys. Rev. B · 1996 · 54 · 771610.1103/PhysRevB.54.7716 ↗
3. Appl. Phys. Lett. · 2003 · 83 · 102910.1063/1.1598624 ↗
4. IEEE Electron Device Lett. · 2012 · 33 · 88110.1109/LED.2012.2190259 ↗
5. J. Electrochem. Soc. · 1993 · 140 · 158610.1149/1.2221606 ↗
6. Jpn. J. Appl. Phys. · 1996 · 35 · L32810.1143/JJAP.35.L328 ↗
7. Jpn. J. Appl. Phys. · 1997 · 36 · 688410.1143/JJAP.36.6884 ↗
8. J. Mater. Res. · 1999 · 14 · 310.1557/JMR.1999.0149 ↗
9. Thin Solid Films · 2001 · 391 · 5710.1016/S0040-6090(01)00962-2 ↗
10. J. Mater. Res. · 2004 · 19 · 91310.1557/jmr.2004.19.3.913 ↗
11. J. Appl. Phys. · 2012 · 111 · 01370610.1063/1.3671412 ↗
12. J. Magn. Magn. Mater. · 2000 · 211 · 28310.1016/S0304-8853(99)00748-9 ↗