Comment on “Investigation of significantly high barrier height in Cu/GaN Schottky diode” [AIP Adv. 6, 015206 (2016)]
Bibliographic record
Abstract
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor materials and interfaces · Ga2O3 and related materials
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Affiliations
Shrikant Nanomaterials Research Pvt. Ltd. , Nagpur 440024,
References (12)
Show source-provided references
1. Investigation of significantly high barrier height in Cu/GaN Schottky diode10.1063/1.4939936 ↗
2. Barrier inhomogeneities at Schottky contacts10.1063/1.347243 ↗
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7. Study of 1/f noise characteristics in Cu/n-GaN Schottky barrier diode10.1063/1.4948083 ↗
8. Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes10.1088/0022-3727/4/10/319 ↗
9. The effects of the interfacial layer with interface states on controlling the electronic properties of Au/n-GaAs Schottky diode
10. Thermodynamic stability and structure of copper oxide surfaces: A first-principles investigation10.1103/physrevb.75.125420 ↗
11. Thermostimulated impurity conduction in characterization of electrodeposited Cu2O films10.1063/1.348709 ↗
12. Structural and electrical characterizations of electrodeposited p-type semiconductor Cu2O films10.1149/1.1862478 ↗