Phase-change controlled spin–orbit torque magnetic tunnel junction for in-memory sensing and computing
Source abstract
Abstract
We present a device integrated thermal and optical induced phase change materials vanadium dioxide and spin–orbit torque magnetic tunnel junction. This device showcases the ability to perform in-memory sensing and computing under thermal and optical stimulus, manifesting multiple logic functions in response to different input signals. Furthermore, a circuit simulation model based on the experimental results is built, which can implement 16 types of reconfigurable Boolean logic gates. On this basis, a 1 kb half-adder Magnetoresistive Random Access Memory (MRAM) array is constructed that significantly enhancing the computational throughput.
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Research context
OpenAlex topics: Advanced Memory and Neural Computing · Magnetic properties of thin films · Ferroelectric and Negative Capacitance Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Beijing Smart-Chip Microelectronics Technology Co., Ltd. 1 , Beijing 100192,
School of Integrated Circuit Science and Engineering, Beihang University 2 , Beijing 100191,
Funding
Laboratory Specialized Scientific Research Projects of Beijing Smart-Chip Microelectronics Technology Co., Ltd.
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