Enhancement of tunnel magnetoresistance in fully perpendicular MnGa-based magnetic tunnel junctions with metastable bcc CoMnFe interlayer
Source abstract
Abstract
We investigated the tunnel magnetoresistance (TMR) effect in fully perpendicular magnetized MnGa-based magnetic tunnel junctions (MTJs) with CoFeB as the top electrode. In these perpendicular (p)-MTJs, thin metastable body-centered cubic (bcc) CoMnFe alloys are used as an interlayer between the MgO barrier and MnGa layers to enhance the TMR ratio. This study highlights the utility of bcc Co-based alloys, such as CoMnFe, which exhibit antiferromagnetic coupling with MnGa in p-MTJs. The TMR ratios of ∼106% and 110% were observed corresponding to single and double interface p-MTJs, respectively, after annealing at 300 °C, demonstrating the potential of these materials for high-performance spin-transfer torque (STT) devices based on p-MTJs.
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Research context
OpenAlex topics: Magnetic properties of thin films · ZnO doping and properties · Heusler alloys: electronic and magnetic properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
WPI Advanced Institute for Materials Research, Tohoku University 1 , Katahira 2-1-1, Sendai 980-8577,
Department of Applied Physics, Graduate School of Engineering, Tohoku University 2 , Sendai 980-8579,
Center for Science and Innovation in Spintronics, Tohoku University 3 , Katahira 2-1-1, Sendai 980-8577,
Funding
KAKENHI · JST-CREST · X-NICS
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