Injection of low-energy SiCH5+ ion-beam to Si substrate during chemical vapor deposition process using methylsilane

Silicon carbide (SiC) films produced on Si substrates by the thermal chemical vapor deposition (CVD) method using methylsilane (MS) were compared with those made by the mass-selected ion-beam deposition (MSIBD) method using MS-derived 100 eV SiCH5+ ions. We also investigated the effect of SiCH5+ ion injections during the CVD process. When the substrate was 550 °C, no distinct peaks were found in the Fourier transform infrared (FTIR) spectroscopy spectra of the samples obtained by both CVD and MSIBD. By contrast, an obvious FTIR peak due to the presence of SiC was observed when SiCH5+ ions were injected to a substrate in conjunction with MS. In the case of 650 °C, we found that the film thickness was significantly increased when additional SiCH5+ ions were injected during the CVD process using MS. These results suggest that the interaction between MS and SiCH5+ has some effects on the SiC film formation at the substrate temperatures 550 and 650 °C. When the substrate temperature was set at 750 °C, the effect of the SiCH5+ ion injection on the SiC film formation was negligibly small compared to that of CVD.