Coupled surface and bulk diffusion in crystals
Source abstract
Abstract
We analyze point defect bulk and surface diffusion near the crystal–vacuum interface and show that bulk diffusion is coupled with surface diffusion via the atomic processes in the intermediate subsurface layer. A set of self-contained differential equations describing the interaction of self-interstitials and bulk vacancies with the surface of crystal is proposed. The results show the existence of the fundamental relation between the equilibrium concentrations of the point defects in bulk and at the surface of the crystal. For the case of silicon, the energy barrier differences that restrict the point defect fluxes between the bulk and surface of the crystal are estimated.
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Research context
OpenAlex topics: Microstructure and mechanical properties · Solidification and crystal growth phenomena · Silicon and Solar Cell Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Skolkovo Institute of Science and Technology, Center for Engineering Physics , Bolshoy Boulevard 30, bld. 1, Moscow 121205, Russia
Funding
Ministry of Science and Higher Education of the Russian Federation
References (33)
Show source-provided references
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