Tunable anomalous Hall effect in multilayers induced by artificial interfacial scattering dots
Source abstract
Abstract
Anomalous Hall effect (AHE) in MgO/CoFeB/X/Ta/MgO (X: Mg or Ru) multilayers by interfacial modification was reported. AHE behavior can be effectively tuned with the different insertion. For example, the anomalous Hall resistivity (ρAH) value increases by 23% with 0.4 nm Mg insertion. Whereas, the ρAH value decreases by 7.5% with 0.4 nm Ru insertion. Interfacial structural results from X-ray photoelectron spectroscopy (XPS) shows various interfacial oxygen migration can be induced by the different insertion, leading to the opposite contribution to AHE in multilayers structure. This study will provide an effective way to tune the properties of the AHE-based devices.
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Research context
OpenAlex topics: Magnetic properties of thin films · ZnO doping and properties · Advanced Data Storage Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Physics and Chemistry, University of Science and Technology Beijing 1 , Beijing 100083, China
Department of Physics, Renmin University of China 2 , Beijing 100872, China
Funding
National Key Scientific Research Projects of China · National Natural Science Foundation of China
References (40)
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