The intrinsic ferromagnetic half-metals with high Curie temperature of tetragonal XCrS4 (X=Ti, Zr) monolayer
Source abstract
Abstract
Two-dimensional intrinsic magnetic materials with a high Curie temperature (TC) and 100% spin-polarization are highly desirable for creating spintronic devices. In this work, the electronic structure and intrinsic magnetism of XCrS4 (X = Ti, Zr) monolayers are predicted by using first-principles calculations. XCrS4 (X = Ti, Zr) monolayer materials exhibit excellent dynamical, thermal, and dynamically stable stability and small binding energy. The band structures show that XCrS4 (X = Ti, Zr) monolayers are intrinsic ferromagnetic (FM) half-metals with wide half-metallic gaps. Monte Carlo simulations based on the Heisenberg model are used to estimate the Curie temperature (TC) of the TiCrS4 (73 K) and ZrCrS4 (216 K) monolayers. The magnetic performances can be significantly modulated by strain; the TiCrS4 monolayer can undergo FM to antiferromagnetic phase transition under certain uniaxial and biaxial strains. The results indicate that the intrinsic half-metals with higher TC and controllable magnetic properties make XCrS4 (X = Ti, Zr) monolayers enrich the application of nanoscale spintronic devices.
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Research context
OpenAlex topics: 2D Materials and Applications · Heusler alloys: electronic and magnetic properties · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
College of Science, Hebei North University , Zhangjiakou 075000, China
Funding
Science and Technology Project of Hebei Education Department · Doctoral Fund of Hebei North University · College students Innovative training program of Hebei North University
References (56)
Show source-provided references
1. First-principles design of spintronics materials10.1093/nsr/nww026 ↗
2. Nobel lecture: Origin, development, and future of spintronics10.1103/revmodphys.80.1517 ↗
3. Spintronics: Fundamentals and applications10.1103/revmodphys.76.323 ↗
4. Phys. Rev. B · 2009 · 80 · 18450510.1103/PhysRevB.80.184505 ↗
5. Graphene photonics, plasmonics, and broadband optoelectronic devices10.1021/nn300989g ↗
6. Two-dimensional nanosheets produced by liquid exfoliation of layered materials10.1126/science.1194975 ↗
7. Two-dimensional atomic crystals10.1073/pnas.0502848102 ↗
8. Detection of gas molecule using C3N island single electron transistor10.1016/j.carbon.2018.12.018 ↗
9. Spin-half paramagnetism in graphene induced by point defects10.1038/nphys2183 ↗
10. Tensile strain switched ferromagnetism in layered NbS2 and NbSe210.1021/nn303198w ↗
11. Manipulating electronic and magnetic properties of black phosphorene with 4d series transition metal adsorption10.1016/j.physleta.2019.05.057 ↗
12. Half-metallic ferromagnetism and surface functionalization-induced metal-insulator transition in graphene-like two-dimensional Cr2C crystals10.1021/acsami.5b05401 ↗
13. Stable half-metallic monolayers of FeCl210.1063/1.4921096 ↗
14. Layer-dependent ferromagnetism in a van der Waals crystal down to the monolayer limit10.1038/nature22391 ↗
15. Discovery of intrinsic ferromagnetism in two-dimensional van der Waals crystals10.1038/nature22060 ↗
16. Room-temperature half-metallicity in La(Mn,Zn)AsO alloy via element substitutions10.1021/ja412317s ↗
17. Emerging photoluminescence in monolayer MoS210.1021/nl903868w ↗
18. Anomalous lattice vibrations of single- and few-layer MoS210.1021/nn1003937 ↗
19. Electronic structures and magnetic properties of MoS2 nanostructures: atomic defects, nanoholes, nanodots and antidot10.1039/C3CP50381J ↗
20. Advances in TiS2 for energy storage, electronic devices, and catalysis: A review10.1016/j.pnsc.2023.05.004 ↗
21. Single-layer semiconducting nanosheets: High-yield preparation and device fabrication10.1002/anie.201106004 ↗
22. Indirect-to-direct band gap transition of the ZrS2 monolayer by strain: First-principles calculations10.1039/c3ra46090h ↗
23. Edge-controlled half-metallic ferromagnetism and direct-gap semiconductivity in ZrS2 nanoribbons10.1039/c7ra05362b ↗
24. Electronic structure of titanium disulfide nanostructures: Monolayers, nanostripes, and nanotubes10.1134/1.2042599 ↗
25. Bulk and surface electronic structure of 1T-TiS2 and 1T-TiSe210.1103/PhysRevB.56.4455 ↗
26. The ground electronic state of TiS2: Experimental and theoretical studies10.1002/pssc.201000612 ↗
27. HfS2 and TiS2 monolayers with adsorbed C, N, P atoms: A first principles study10.3390/catal10010094 ↗
28. A first-principles study: Single-layer TiS2 modified by non-metal doping10.1007/s00894-022-05396-1 ↗
29. First-principles study on thermodynamic properties and phase transitions in TiS210.1088/0953-8984/23/5/055401 ↗
30. III–V and II–VI Mn-based ferromagnetic semiconductors10.1007/978-3-540-44838-9_29 ↗
31. Metal–insulator transition and magnetotransport in III–V compound diluted magnetic semiconductors10.1016/s0921-5107(99)00057-4 ↗
32. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set10.1103/physrevb.54.11169 ↗
33. Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set10.1016/0927-0256(96)00008-0 ↗
34. Atoms, molecules, solids, and surfaces: Applications of the generalized gradient approximation for exchange and correlation10.1103/physrevb.46.6671 ↗
35. Generalized gradient approximation made simple10.1103/physrevlett.77.3865 ↗
36. First-principles study on the electronic structures and magnetic properties of InN monolayer doped with Cr, Fe, and Ni10.1016/j.physe.2020.114524 ↗
37. Structural, electronic, and magnetic properties of 3d transition metal doped GaN nanosheet: A first-principles study10.1002/qua.25118 ↗
38. Linear response approach to the calculation of the effective interaction parameters in the LDA + U method10.1103/physrevb.71.035105 ↗
39. Easy-axis rotation in ferromagnetic monolayer CrN induced by fluorine and chlorine functionalization10.1039/d2cp03318f ↗
40. Robust ferromagnetism in two-dimensional GeC/CrN heterobilayers10.1039/d3cp01731a ↗
41. Special points for Brillouin-zone integrations10.1103/physrevb.13.5188 ↗
42. Hybrid functionals based on a screened Coulomb potential10.1063/1.1564060 ↗
43. Phonons and related crystal properties from density-functional perturbation theory10.1103/revmodphys.73.515 ↗
44. Crystal orbital Hamilton populations (COHP): Energy-resolved visualization of chemical bonding in solids based on density-functional calculations10.1021/j100135a014 ↗
45. Crystal orbital Hamilton population (COHP) analysis as projected from plane-wave basis sets10.1021/jp202489s ↗
46. LOBSTER: A tool to extract chemical bonding from plane-wave based DFT10.1002/jcc.24300 ↗
47. LOBSTER: Local orbital projections, atomic charges, and chemical-bonding analysis from -projector-augmented-wave-based density-functional theory10.1002/jcc.26353 ↗
48. The crystal orbital Hamilton population (COHP) method as a tool to visualize and analyze chemical bonding in intermetallic compounds10.3390/cryst8050225 ↗
49. ELF: The electron localization function10.1002/anie.199718081 ↗
50. Room-temperature magnetoresistance in an oxide material with an ordered double-perovskite structure10.1038/27167 ↗
51. Large half-metallic gaps in the quaternary Heusler alloys CoFeCrZ (Z=Al, Si, Ga, Ge): A first-principles study10.1016/j.jallcom.2012.11.077 ↗
52. Evidencing the existence of exciting half-metallicity in two-dimensional TiCl3 and VCl3 sheets10.1038/srep19407 ↗
53. Chromium sulfide halide monolayers: Intrinsic ferromagnetic semiconductors with large spin polarization and high carrier mobility10.1039/c8nr06368k ↗
54. Topological crystalline insulators in the SnTe material class10.1038/ncomms1969 ↗
55. Crystal field effect induced topological crystalline insulators in monolayer IV–VI semiconductors10.1021/acs.nanolett.5b00308 ↗
56. Room-temperature ferromagnetic nanotubes controlled by electron or hole doping10.1038/nature02970 ↗