On the role of the atomic bond types in light emission from Si nanoparticles

We present an analysis of the relation between atomic and luminescent characteristics of a variety of Si-enriched Silicon Oxide films obtained by different techniques and various Si contents. Detailed studies of the Si 2p core level energy region and its components were carried out, as well as of Photoluminescence and its components. The results from such studies were correlated and analyzed. A combination of Quantum Confinement phenomena and the presence of radiative defects was identified as the cause for the light emission. A relation between the wavelength of the Photoluminescence due to Quantum Confinement, and the percentage of elemental Si bonds in the material was observed regardless of the fabrication technique; wile the wavelength of the emission caused by defects did not change except under very specific fabrication conditions. The results and conclusions allowed to establish a comparison parameter based on the material characteristics that can be used for all samples regardless of the fabrication method.