High crystallinity N-polar InGaN layers grown on cleaved ScAlMgO4 substrates
Source abstract
Abstract
We have grown high-crystallinity InGaN layers on ScAlMgO4 (SAM) substrates using metalorganic vapor-phase epitaxy. We have prepared atomically flat SAM substrates by cleaving them along the c-plane and have utilized direct InGaN growth without any low-temperature buffer layer. The resulting InGaN layer has a distinct hexagonal hillock morphology and remarkable crystalline quality. The x-ray rocking curve measurements showed that (0002̄) and (10–1–2) peaks full widths at half-maximum are as good as 384 and 481 arcsec, respectively. The calculated threading dislocations densities are as low as 2.9 × 108 and 1.6 × 109 cm−2 in the case of screw-type and edge-type dislocations, respectively.
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Metal and Thin Film Mechanics · Acoustic Wave Resonator Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Electrical and Computer Engineering Program, Computer, Electrical and Mathematical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST) 1 , Thuwal 23955-6900, Saudi Arabia
Graduate School of Electrical and Electronic Engineering, Chiba University 2 , 1-30 Yayoicho, Inage-ku, Chiba 263-8522, Japan
Chemistry Program, Computer, Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST) 3 , Thuwal 23955-6900, Saudi Arabia
Funding
King Abdullah University of Science and Technology
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