Comparative studies of interatomic potentials for modeling point defects in wurtzite GaN
Source abstract
Abstract
In this paper, a new version of the Stillinger–Weber (SW) potential for wurtzite GaN is presented, by which we systematically explore the structural and thermodynamical properties of native point defects and their complexes. In parallel, the semi-empirical Modified Embedded-Atom Method (MEAM) potential is selected for comparison. The SW and MEAM potentials are assessed by the reproduction of the fundamental properties of wurtzite GaN and by the ability to describe the inversion domain boundaries and the wurtzite–rocksalt phase transition. Then the structural search of native point defects and their complexes in GaN is implemented using both SW and MEAM potentials with the benchmark of Density Functional Theory (DFT) calculations. Besides vacancies and antisites, four N and five Ga interstitials are confirmed by refining the DFT calculations, among which two N split interstitials N+−N⟨21̄1̄0⟩ and N+−Ga⟨011̄0⟩, and two Ga split interstitials, Ga+−Ga⟨011̄0⟩−g and Ga+−N⟨011̄0⟩, are observed for the first time. The SW potential correctly predicts the octahedral occupation GaOct to be the most stable Ga interstitial, while the MEAM potential predicts the ground state of the N+−N⟨011̄0⟩ split interstitial (N+−N⟨011̄0⟩−g) as the most stable N interstitial. However, neither of the two potentials could simultaneously generate the most stable configurations of N and Ga interstitials. The investigations of point defect complexes reveal that N octahedral Frenkel [FrenkelOct(N)] and paired antisite (NGaGaN) defects are unstable and get converted into VN⊕N+−N⟨011̄0⟩−g configurations with different separations between VN and N+−N⟨011̄0⟩−g point defects based on the DFT calculations. The formation energies calculated by the DFT and SW potential demonstrate that Schottky, Ga octahedral Frenkel [FrenkelOct(Ga)], and VN⊕N+−N⟨011̄0⟩−g point defect complexes are energetically feasible and that they should not dissociate into two isolated point defects. In contrast, the MEAM potential predicts the dissociation to be exothermic for Schottky and VN⊕N+−N⟨011̄0⟩−g. Overall, the structural features concerned with N–N or Ga–Ga bonds relaxed by the SW potential are more consistent with DFT calculations than the MEAM counterpart.
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor materials and devices · Semiconductor materials and interfaces
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Key Laboratory of Materials Physics, Institute of Solid State Physics, Hefei Institutes of Physical Science, CAS 1 , 350 Shushanhu Road, Hefei 230031, China
Centre de Recherche sur les Ions, les Matériaux et la Photonique (CIMAP), UMR 6252 CNRS 2 , 6 Boulevard du Maréchal Juin, Caen 14050, France
Funding
China Scholarship Council · HORIZON EUROPE Framework Programme · Région Normandie
References (73)
Show source-provided references
1. Jpn. J. Appl. Phys. · 2006 · 45 · 900110.1143/jjap.45.9001 ↗
2. IEEE Trans. Nucl. Sci. · 2002 · 49 · 273310.1109/tns.2002.805363 ↗
3. Ruterana · 2003 · 52910.1002/3527607641 ↗
4. J. Vac. Sci. Technol., A · 1995 · 13 · 70510.1116/1.579811 ↗
5. Jpn. J. Appl. Phys. · 1996 · 35 · L7410.1143/jjap.35.l74 ↗
6. Semicond. Sci. Technol. · 1999 · 14 · R2710.1088/0268-1242/14/6/201 ↗
7. Mater. Sci. Semicond. Process. · 2018 · 78 · 11810.1016/j.mssp.2017.10.009 ↗
8. Microelectron. Reliab. · 2021 · 124 · 11433610.1016/j.microrel.2021.114336 ↗
9. 1992 · 487
10. J. Phys.: Condens. Matter · 2002 · 14 · R65710.1088/0953-8984/14/22/201 ↗
11. J. Vac. Sci. Technol., A · 2013 · 31 · 05080110.1116/1.4799504 ↗
12. JOM · 2015 · 67 · 160110.1007/s11837-015-1359-y ↗
13. Appl. Phys. Lett. · 2019 · 115 · 01210310.1063/1.5098965 ↗
14. J. Appl. Phys. · 2005 · 97 · 06130110.1063/1.1868059 ↗
15. Phys. Rev. B · 1994 · 50 · 806710.1103/physrevb.50.8067 ↗
16. J. Mater. Chem. C · 2013 · 1 · 87710.1039/c2tc00039c ↗
17. Phys. Rev. Appl. · 2020 · 14 · 02403910.1103/physrevapplied.14.024039 ↗
18. J. Mater. Chem. C · 2021 · 9 · 317710.1039/d0tc05652a ↗
19. Phys. Rev. Lett. · 2012 · 109 · 20640210.1103/physrevlett.109.206402 ↗
20. Phys. Rev. B · 2014 · 90 · 08520310.1103/physrevb.90.085203 ↗
21. npj Computat. Mater. · 2017 · 3 · 1210.1038/s41524-017-0014-2 ↗
22. J. Appl. Phys. · 2019 · 125 · 21570510.1063/1.5094356 ↗
23. J. Phys. D: Appl. Phys. · 2019 · 52 · 33510410.1088/1361-6463/ab2033 ↗
24. J. Appl. Phys. · 2021 · 129 · 11110110.1063/5.0041506 ↗
25. Materials · 2020 · 13 · 362710.3390/ma13163627 ↗
26. Phys. Rev. B · 2004 · 70 · 24520810.1103/physrevb.70.245208 ↗
27. Phys. Rev. Lett. · 2000 · 85 · 276110.1103/physrevlett.85.2761 ↗
28. Phys. Rev. Appl. · 2016 · 6 · 06400210.1103/physrevapplied.6.064002 ↗
29. Phys. Rev. Lett. · 2003 · 90 · 13740210.1103/physrevlett.90.137402 ↗
30. Phys. Rev. B · 2004 · 69 · 03520710.1103/physrevb.69.035207 ↗
31. Phys. Rev. B · 2016 · 93 · 24520110.1103/physrevb.93.245201 ↗
32. Phys. Rev. B · 2001 · 64 · 23320110.1103/physrevb.64.233201 ↗
33. Appl. Phys. Lett. · 2010 · 96 · 16190110.1063/1.3394007 ↗
34. J. Appl. Phys. · 2010 · 108 · 10350310.1063/1.3509147 ↗
35. Nano Lett. · 2015 · 15 · 92310.1021/nl5036513 ↗
36. Nano Lett. · 2017 · 17 · 484610.1021/acs.nanolett.7b01697 ↗
37. Comput. Mater. Sci. · 2000 · 17 · 38010.1016/S0927-0256(00)00056-2 ↗
38. Phys. Rev. B · 2002 · 65 · 20532310.1103/physrevb.65.205323 ↗
39. J. Appl. Phys. · 2017 · 122 · 23570310.1063/1.5001339 ↗
40. J. Phys.: Condens. Matter · 2009 · 21 · 32580110.1088/0953-8984/21/32/325801 ↗
41. J. Phys.: Condens. Matter · 2003 · 15 · 564910.1088/0953-8984/15/32/324 ↗
42. Mater. Sci. Eng. B · 2001 · 82 · 11710.1016/s0921-5107(00)00754-6 ↗
43. Phys. Rev. B · 2007 · 75 · 11520110.1103/physrevb.75.115201 ↗
44. Phys. Rev. B · 2004 · 70 · 03530910.1103/physrevb.70.035309 ↗
45. Phys. Rev. B · 2003 · 67 · 20521010.1103/physrevb.67.205210 ↗
46. Phys. Rev. B · 2003 · 68 · 03330510.1103/physrevb.68.033305 ↗
47. Phys. Rev. B · 1985 · 31 · 526210.1103/physrevb.31.5262 ↗
48. J. Phys. Chem. Solids · 1969 · 30 · 129710.1016/0022-3697(69)90191-7 ↗
49. Phys. Rev. Lett. · 1996 · 77 · 10310.1103/physrevlett.77.103 ↗
50. Phys. Rev. B · 2001 · 64 · 04520810.1103/physrevb.64.045208 ↗
51. 1997
52. 2005
53. in 't Veld · Comp. Phys. Comm. · 2022 · 271 · 1081710.1016/j.cpc.2021.108171 ↗
54. Phys. Rev. B · 1996 · 54 · 1116910.1103/physrevb.54.11169 ↗
55. Phys. Rev. B · 1994 · 50 · 1795310.1103/physrevb.50.17953 ↗
56. Phys. Rev. Lett. · 1996 · 77 · 386510.1103/physrevlett.77.3865 ↗
57. Appl. Phys. Lett. · 1996 · 69 · 7310.1063/1.118123 ↗
58. J. Appl. Phys. · 2016 · 119 · 24511110.1063/1.4955046 ↗
59. Prog. Mater. Sci. · 2010 · 55 · 24710.1016/j.pmatsci.2009.05.002 ↗
60. Comput. Phys. Commun. · 2011 · 182 · 54010.1016/j.cpc.2010.10.006 ↗
61. Comput. Phys. Commun. · 2011 · 182 · 220110.1016/j.cpc.2011.04.019 ↗
62. Phys. Rev. B · 2006 · 74 · 07542010.1103/PhysRevB.74.075420 ↗
63. Phys. Rev. B · 1978 · 17 · 130210.1103/physrevb.17.1302 ↗
64. Phys. Rev. Lett. · 2001 · 86 · 90610.1103/physrevlett.86.906 ↗
65. Phys. Rev. B · 1998 · 58 · 1289910.1103/physrevb.58.12899 ↗
66. Phys. Rev. B · 1996 · 53 · 1631010.1103/physrevb.53.16310 ↗
67. Appl. Phys. Lett. · 1996 · 69 · 239410.1063/1.117648 ↗
68. Appl. Phys. Lett. · 1999 · 74 · 94710.1063/1.123418 ↗
69. Phys. Rev. B · 1994 · 49 · 1410.1103/physrevb.49.14 ↗
70. Phys. Rev. B · 2007 · 75 · 13410910.1103/physrevb.75.134109 ↗
71. Phys. Rev. B · 1995 · 51 · 17255(R)10.1103/PhysRevB.51.17255 ↗
72. Chem. Phys. Lett. · 1986 · 128 · 50110.1016/0009-2614(86)80661-3 ↗
73. J. Appl. Crystallogr. · 2011 · 44 · 127210.1107/S0021889811038970 ↗