Model-based image quality optimization for submicron direct laser writing

Direct Laser Writing (DLW) is widely used in microelectronics, especially in the fabrication of masks. However, due to the limitation of the laser beam, the traditional DLW method without correction or modification is no longer sufficient for the advanced technology nodes. This paper introduces research on the DLW energy simulation model and how to use it to optimize the designed pattern and demonstrates a solution that can intuitively improve the image quality of DLW. In this simulation, patterns of 300 nm line width (600 nm pitch) can be written with a relatively high image log slope. The laser spot diameter is 0.8 µm, and the wavelength is 442 nm. Besides, this model can also be used in correcting corner and edge distortion. Undoubtedly, the improvement of the quality and yield of the traditional DLW can bring great help to the field of microelectronics manufacturing and other fields that are related to DLW.