journal article·2024-11-01Open access

EBIC studies of minority electron diffusion length in undoped p-type gallium oxide

Leonid Chernyak, Seth Lovo, Jian-Sian Li, Chao-Ching Chiang, Fan Ren, Stephen J. Pearton, Corinne Sartel, Zeyu Chi, Yves Dumont, Ekaterine Chikoidze, Alfons Schulte, Arie Ruzin, Ulyana Shimanovich

AIP Advances· Volume 14· Issue 11

Abstract

Minority carrier diffusion length in undoped p-type gallium oxide was measured at various temperatures as a function of electron beam charge injection by electron beam-induced current technique in situ using a scanning electron microscope. The results demonstrate that charge injection into p-type β-gallium oxide leads to a significant linear increase in minority carrier diffusion length followed by its saturation. The effect was ascribed to trapping of non-equilibrium electrons (generated by a primary electron beam) on metastable native defect levels in the material, which in turn blocks recombination through these levels. While previous studies of the same material were focused on probing a non-equilibrium carrier recombination by purely optical means (cathodoluminescence), in this work, the impact of charge injection on minority carrier diffusion was investigated. The activation energy of ∼0.072 eV, obtained for the phenomenon of interest, is consistent with the involvement of Ga vacancy-related defects.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · GaN-based semiconductor devices and materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Physics, University of Central Florida 1 , Orlando, Florida 32816,

Department of Chemical Engineering, University of Florida 2 , Gainesville, Florida 32611,

Department of Materials Science and Engineering, University of Florida 3 , Gainesville, Florida 32611,

Groupe d’Etude de la Matière Condensée, Université Paris-Saclay, Université de Versailles Saint Quentin en Yvelines–CNRS 4 , 45 Av. des Etats-Unis, 78035 Versailles Cedex,

School of Electrical Engineering, Tel Aviv University 5 , Tel Aviv 69978,

Department of Molecular Chemistry and Materials Science, Weizmann Institute of Science 6 , Rehovot 7610001,

Funding

National Science Foundation · United States - Israel Binational Science Foundation · North Atlantic Treaty Organization · Defense Threat Reduction Agency · Institut de Physique · Agence Nationale de la Recherche · Program Hubert Curien Maimonide

References (32)

Show source-provided references
1. Appl. Phys. Rev. · 2018 · 5 · 01130110.1063/1.5006941 ↗
2. Adv. Electron. Mater. · 2018 · 4 · 160050110.1002/aelm.201600501 ↗
3. Adv. Electron. Mater. · 2017 · 3 · 160035010.1002/aelm.201600350 ↗
4. J. Mater. Chem. C · 2017 · 5 · 833810.1039/C7TC02221B ↗
5. Semicond. Sci. Technol. · 2016 · 31 · 03400110.1088/0268-1242/31/3/034001 ↗
6. Jpn. J. Appl. Phys., Part 1 · 2016 · 55 · 1202A210.7567/JJAP.55.1202A2 ↗
7. Condens. Matter · 2024 · 9 · 210.3390/condmat9010002 ↗
8. Solid-State Electron. · 2001 · 45 · 168710.1016/s0038-1101(01)00161-7 ↗
9. Appl. Phys. Lett. · 1996 · 69 · 253110.1063/1.117729 ↗
10. Electron. Lett. · 2001 · 37 · 92210.1049/el:20010605 ↗
11. Superlattices Microstruct. · 2007 · 42 · 20110.1016/j.spmi.2007.04.030 ↗
12. Appl. Phys. Lett. · 2000 · 77 · 87510.1063/1.1306910 ↗
13. Solid-State Electron. · 2003 · 47 · 93110.1016/s0038-1101(02)00449-5 ↗
14. Solid-State Electron. · 2005 · 49 · 166210.1016/j.sse.2005.08.002 ↗
15. J. Appl. Phys. · 2006 · 100 · 08610110.1063/1.2358844 ↗
16. Appl. Phys. Lett. · 2018 · 112 · 08210410.1063/1.5011971 ↗
17. AIP Adv. · 2019 · 9 · 01512710.1063/1.5079730 ↗
18. Appl. Phys. Lett. · 2022 · 120 · 23350310.1063/5.0096950 ↗
19. AIP Adv. · 2024 · 14 · 08510310.1063/5.0220201 ↗
20. Nat. Commun. · 2023 · 14 · 445910.1038/s41467-023-40194-0 ↗
21. ECS J. Solid State Sci. Technol. · 2024 · 13 · 03500310.1149/2162-8777/ad3457 ↗
22. Materials · 2022 · 15 · 116410.3390/ma15031164 ↗
23. J. Alloys Compd. · 2023 · 969 · 17245410.1016/j.jallcom.2023.172454 ↗
24. Appl. Phys. Lett. · 2021 · 118 · 20210610.1063/5.0053301 ↗
25. APL Mater. · 2022 · 10 · 03110610.1063/5.0086449 ↗
26. J. Appl. Phys. · 2020 · 128 · 08570210.1063/5.0017742 ↗
27. Mater. Today Phys. · 2023 · 36 · 10115510.1016/j.mtphys.2023.101155 ↗
28. APL Mater. · 2018 · 6 · 09610210.1063/1.5042646 ↗
29. 1969
30. Jpn. J. Appl. Phys. · 2023 · 62 · SF080210.35848/1347-4065/acc7b1 ↗
31. J. Appl. Phys. · 2024 · 136 · 06570210.1063/5.0205933 ↗
32. J. Appl. Phys. · 2024 · 135 · 19570210.1063/5.0205950 ↗