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journal article·2022-10-01Open access

Raman tensor studies on defective non-van der Waals Bi2O2Se

Un Jeong Kim, Seung Hyun Nam, Seok In Kim, Yoojoong Han, Jeechan Yoon, Humberto R. Gutiérrez, Miyeon Cheon, Gun Cheol Kim, Yeonsang Park, Moonsang Lee, Myung Gwan Hahm, Hyungbin Son

AIP Advances· Volume 12· Issue 10
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Source abstract

Abstract

The Raman tensors of the three modes at ∼55, ∼80, and ∼160 cm−1 for the non-van der Waals layered material Bi2O2Se, which were assigned to Eu, Eg, and A1g, respectively, were experimentally investigated. Two modes at ∼55 and ∼80 cm−1, which were not observable in perfect crystal Bi2O2Se in the backscattering configuration, owing to the Raman selection rule, were activated by defects. These two modes exhibit strong polarization dependence at line defects and the excitation energy; thus, their Raman polarizability tensors exhibit strong dependence on the defect morphology and geometric characteristics of Bi2O2Se. The results of this study confirm that the Raman tensors of nanocrystalline structures can be modulated by defects.
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Research context

Nanomaterials

OpenAlex topics: 2D Materials and Applications · Topological Materials and Phenomena · Graphene research and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Photonic Device Laboratory, Samsung Advanced Institute of Technology 1 , Suwon, Gyeonggi-do 16419, Republic of Korea

Department of Materials Science and Engineering, Inha University 2 , Incheon 22212, Republic of Korea

School of Integrative Engineering, Chung-Ang University 3 , Seoul 06974, Republic of Korea

Department of Physics, University of South Florida Tampa 4 , Tampa, Florida 33620, USA

Department of Physics, Pusan National University 5 , Pusan 46241, Republic of Korea

Department of Physics, Chungnam National University 6 , Daejeon 34134, Republic of Korea

Institute of Quantum Systems, Chungnam National University 7 , Daejeon 34134, Republic of Korea

Funding

National Research Foundation of Korea · Division of Materials Research · Chung-Ang University

References (20)

Show source-provided references
1. Nat. Nanotechnol. · 2017 · 12 · 53010.1038/nnano.2017.43 ↗
2. Adv. Funct. Mater. · 2018 · 28 · 170643710.1002/adfm.201706437 ↗
3. Adv. Funct. Mater. · 2019 · 29 · 190663910.1002/adfm.201906639 ↗
4. Adv. Funct. Mater. · 2019 · 29 · 180797910.1002/adfm.201807979 ↗
5. Adv. Mater. · 2019 · 31 · 180494510.1002/adma.201804945 ↗
6. Adv. Funct. Mater. · 2019 · 29 · 190580610.1002/adfm.201905806 ↗
7. 2000
8. Phys. Rev. Lett. · 2010 · 105 · 13680510.1103/physrevlett.105.136805 ↗
9. Nat. Nanotechnol. · 2014 · 9 · 37210.1038/nnano.2014.35 ↗
10. Nat. Phys. · 2009 · 5 · 43810.1038/nphys1270 ↗
11. Sci. Rep. · 2018 · 8 · 1092010.1038/s41598-018-29385-8 ↗
12. ACS Nano · 2022 · 16 · 363710.1021/acsnano.1c06598 ↗
13. J. Phys. Chem. C · 2018 · 122 · 885310.1021/acs.jpcc.8b02194 ↗
14. RSC Adv. · 2019 · 9 · 1804210.1039/c9ra02584g ↗
15. J. Phys. Chem. C · 2018 · 122 · 1997010.1021/acs.jpcc.8b05475 ↗
16. High Pressure Res. · 2002 · 22 · 29910.1080/08957950212798 ↗
17. J. Appl. Phys. · 2005 · 97 · 05351610.1063/1.1856222 ↗
18. Nano Lett. · 2016 · 16 · 236310.1021/acs.nanolett.5b05096 ↗
19. Nat. Commun. · 2019 · 10 · 80710.1038/s41467-019-08764-3 ↗
20. Raman-active modes of porous gallium phosphide at high pressures and low temperatures10.1088/0953-8984/14/50/313 ↗