journal article·2021-08-01Open access

Wavelength and power dependence on multilevel behavior of phase change materials

Gary A. Sevison, Joshua A. Burrow, Haiyun Guo, Andrew Sarangan, Joshua R. Hendrickson, Imad Agha

AIP Advances· Volume 11· Issue 8

Abstract

We experimentally probe the multilevel response of GeTe, Ge2Sb2Te5 (GST), and 4% tungsten-doped GST (W-GST) phase change materials (PCMs) using two wavelengths of light: 1550 nm, which is useful for telecom-applications, and near-infrared 780 nm, which is a standard wavelength for many experiments in atomic and molecular physics. We find that the materials behave differently with the excitation at the different wavelengths and identify useful applications for each material and wavelength. We discuss thickness variation in the thin films used as well and comment on the interaction of the interface between the material and the substrate with regard to the multilevel behavior. Due to the differences in penetration depths, absorption, and index contrast, different PCMs could be more suitably used depending on the application and wavelength of operation.
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Research context

OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Nonlinear Optical Materials Studies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Electro-Optics and Photonics, University of Dayton 1 , Dayton, Ohio 45469, USA

Air Force Research Laboratory, Sensors Directorate 2 , Wright-Patterson Air Force Base, Ohio 45433, USA

Department of Physics, University of Dayton 3 , Dayton, Ohio 45469, USA

Funding

National Science Foundation · Defense Associated Graduate Student Innovators · Air Force Office of Scientific Research

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