Research on the emitter thickness optimization of GaInP/GaAs/Ge triple-junction solar cell under space proton irradiation based on TCAD simulation
Source abstract
Abstract
The degradation of GaInP/GaAs/Ge triple-junction solar cells with different GaAs sub-cell emitter thickness induced by proton irradiation is studied using numerical simulation. The degradation results of triple-junction solar cells with different GaAs emitter thickness have been investigated. The degradation mechanism induced by proton irradiation is analyzed. The results show that the short-circuit current and maximum power increase first and then decrease with the increase in GaAs sub-cell emitter thickness. The degradation of the GaAs sub-cell external quantum efficiency is greater than that of the GaInP sub-cell induced by proton irradiation. Meanwhile, the remaining external quantum efficiency of the GaAs sub-cell first increases and then decreases with the increase in emitter thickness after proton irradiation.
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Research context
OpenAlex topics: solar cell performance optimization · Silicon and Solar Cell Technologies · Thin-Film Transistor Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Research Institute of Xi’an High Technology 1 , Xi’an 710025, China
State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology 2 , Xi’an 710024, China
References (17)
Show source-provided references
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