Interface optimization for low-contact resistance between bismuth telluride and barrier metals in thermoelectric generation devices
Source abstract
Abstract
Thermoelectric generation (TEG) devices with bismuth telluride (Bi2Te3) are most advanced toward commercialization. However, contact resistance at the interface between Bi2Te3 and the barrier metal hinders the thermoelectric conversion efficiency and reliability of TEG devices. In this study, we fabricated 189 samples including barrier metals (Ti, Cr, or Ni)/Bi2Te3 interfaces and evaluated specific contact resistivity (ρc) and its temperature dependence using an advanced transfer length method. Our TLM measurements revealed that the specific contact resistivity of Bi2Te3 increased independently of the barrier metal. Furthermore, results showed that the Ti/Bi2Te3 interface had the lowest ρc at 298 K, whereas the Ni/Bi2Te3 interface exhibited the lowest ρc at 378 K. Therefore, the results demonstrated that using Ti as a barrier metal on the cool side and Ni on the hot side of Bi2Te3 can enhance the conversion efficiency and thermal reliability of TEG devices.
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Research context
OpenAlex topics: Advanced Thermoelectric Materials and Devices · Chalcogenide Semiconductor Thin Films · Advanced Semiconductor Detectors and Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Faculty of Materials Science and Engineering, Kyoto Institute of Technology 1 , Matsugasaki, Sakyo-ku, Kyoto 606-8585,
The Institute of Science and Industrial Research 2 , , 8-1 Mihogaoka, Ibaraki, Osaka 567-0047,
Osaka University 2 , , 8-1 Mihogaoka, Ibaraki, Osaka 567-0047,
Department of Applied Science and Technology 3 , Politecnico di Torino, Corso Duca degli Abruzzi, 24, 10129 Torino,
Funding
Japan Society for the Promotion of Science London · Japan Science and Technology Agency · Ministry of Education, Culture, Sports, Science and Technology
References (27)
Show source-provided references
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