Optimal waveguide structure for low-threshold InGaN/GaN-based photonic-crystal surface-emitting lasers
Source abstract
Abstract
We analyzed the optimal waveguide structure of two types of InGaN-based photonic crystal surface-emitting lasers (PCSELs) to suppress the coupling with leaky modes via mode simulations. To minimize the threshold material gain (gth), we calculated the confinement factor and quality factor of PCSELs with varying waveguide layer thicknesses in the separate confinement heterostructure (SCH) layer. The optical mode intensity profile revealed the coupling between the fundamental mode of SCH and parasitic leaky modes in the cladding layer or substrate as the primary root cause of the low-quality factor and high threshold gain of PCSELs. The asymmetric nature of the SCH structure yielded the optimal waveguide structure to be dependent on the position of the air holes. With a proper waveguide thickness and air hole depth, the optimized threshold modal gain of PCSELs with the n-side air holes can be less than 30 cm−1.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Photonic Crystals and Applications · Semiconductor Lasers and Optical Devices · Photonic and Optical Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University , Hsinchu 30010, Taiwan
Funding
Ministry of Education · National Science and Technology Council
References (35)
Show source-provided references
1. Augmented reality and virtual reality displays: Emerging technologies and future perspectives10.1038/s41377-021-00658-8 ↗
2. Metasurface eyepiece for augmented reality10.1038/s41467-018-07011-5 ↗
3. Advanced liquid crystal devices for augmented reality and virtual reality displays: Principles and applications10.1038/s41377-022-00851-3 ↗
4. Mini-LED, micro-LED and OLED displays: Present status and future perspectives10.1038/s41377-020-0341-9 ↗
5. The implementation of sapphire microreflector for monolithic micro-LED array10.1109/tcpmt.2021.3049563 ↗
6. Alleviating the crosstalk effect via a fine-moulded light-blocking matrix for colour-converted micro-LED display with a 122% NTSC gamut10.37188/lam.2022.036 ↗
7. GaN-based emissive microdisplays: A very promising technology for compact, ultra-high brightness display systems10.1002/jsid.516 ↗
8. Investigating the electrical crosstalk effect between pixels in high-resolution organic light-emitting diode microdisplays10.1038/s41598-023-41033-4 ↗
9. Confocal microscopic analysis of optical crosstalk in GaN micro-pixel light-emitting diodes10.1063/1.4934840 ↗
10. Optical crosstalk analysis of micro-pixelated GaN-based light-emitting diodes on sapphire and Si substrates10.1002/pssa.201532789 ↗
11. Ultrasmall, ultracompact and ultrahigh efficient InGaN micro light emitting diodes (μLEDs) with narrow spectral line width10.1021/acsnano.0c01180 ↗
12. Unidirectional luminescence from InGaN/GaN quantum-well metasurfaces10.1038/s41566-020-0641-x ↗
13. Design study of a micro illumination platform based on GaN microLED arrays10.1364/ao.498432 ↗
14. Light-emitting metalenses and meta-axicons for focusing and beaming of spontaneous emission10.1038/s41467-021-23433-0 ↗
15. Lateral cavity photonic crystal surface emitting laser with narrow divergence angle10.1109/lpt.2016.2580676 ↗
16. Vertically integrated diffractive gratings on photonic crystal surface emitting lasers10.1038/s41598-021-82194-4 ↗
17. Photonic-crystal surface-emitting lasers: Review and introduction of modulated-photonic crystals10.1109/jstqe.2017.2696883 ↗
18. General recipe to realize photonic-crystal surface-emitting lasers with 100-W-to-1-kW single-mode operation10.1038/s41467-022-30910-7 ↗
19. Double-lattice photonic-crystal resonators enabling high-brightness semiconductor lasers with symmetric narrow-divergence beams10.1038/s41563-018-0242-y ↗
20. Watt-class high-power, high-beam-quality photonic-crystal lasers10.1038/nphoton.2014.75 ↗
21. A simple method to build high power PCSEL array with isolation pattern design10.3390/cryst12101432 ↗
22. Enhancement of slope efficiency of a dually modulated photonic-crystal surface-emitting laser over a wide range of emission angles by introducing a backside reflector10.1364/josab.472869 ↗
23. Void engineering in epitaxially regrown GaAs-based photonic crystal surface emitting lasers by grating profile design10.1063/5.0035038 ↗
24. Effects of lattice types on GaN-based photonic crystal surface-emitting lasers10.1109/jstqe.2014.2358086 ↗
25. GaN photonic-crystal surface-emitting laser at blue-violet wavelengths10.1126/science.1150413 ↗
26. GaN-based surface-emitting laser with two-dimensional photonic crystal acting as distributed-feedback grating and optical cladding10.1063/1.3528352 ↗
27. Design of GaN-based PCSEL with temperature-insensitive lasing wavelength10.1109/jphot.2021.3091140 ↗
28. Wide-bandgap GaN-based watt-class photonic-crystal lasers10.1038/s43246-022-00288-6 ↗
29. Confinement factor and absorption loss of AlInGaN based laser diodes emitting from ultraviolet to green10.1063/1.3068182 ↗
30. Generation of lossy mode resonances with absorbing thin-films10.1109/jlt.2010.2082492 ↗
31. Optical waveguide simulations for the optimization of InGaN-based green laser diodes10.1063/1.3275325 ↗
32. Three-dimensional coupled-wave analysis for square-lattice photonic crystal surface emitting lasers with transverse-electric polarization: Finite-size effects10.1364/oe.20.015945 ↗
33. Theoretical study on critical thicknesses of InGaN grown on (0001) GaN10.1016/j.jcrysgro.2011.05.002 ↗
34. Critical thickness calculations for InGaN/GaN10.1016/j.jcrysgro.2006.12.054 ↗
35. Green-wavelength GaN-based photonic-crystal surface-emitting lasers10.35848/1882-0786/ad126f ↗