The improvement of CoZrTaB thin films on different substrates for flexible device applications

In this paper, the CoZrTaB thin films are fabricated using sputtering on different substrates and characterized comprehensively. The CoZrTaB thin films have been fabricated in the single-layer and multi-layer structures with SiO2 as the insulator layer, of which the vibrating sample magnetometer results suggest that the saturation field and the coercivity change of the multi-layer structure can be minimized while the lamination structure can suppress the eddy current at high working frequency. Compared with the continuously sputtered 400 nm CoZrTaB thin film, the multi-layer thin film shows a hysteresis loop with a single domain and small coercivity. The surface roughness of each CoZrTaB thin film and two kinds of polyimide substrates is extracted by the atomic force microscope instrument. Besides, material characterization such as X-ray powder diffraction and Rutherford backscattering spectrometry have been conducted to acquire the information of phase and element ratio of the CoZrTaB thin film. Also, the different process conditions that could affect the magnetic properties are investigated and verified. A comparison is made with the previously reported results, sustaining the improvement of the CoZrTaB thin film on different substrates.