A β-Ta system for current induced magnetic switching in the absence of external magnetic field
Source abstract
Abstract
Magnetic switching via Giant Spin Hall Effect (GSHE) has received great interest for its role in developing future spintronics logic or memory devices. In this work, a new material system (i.e. a transition metal sandwiched between two ferromagnetic layers) with interlayer exchange coupling is introduced to realize the deterministic field-free perpendicular magnetic switching. This system uses β-Ta, as the GSHE agent to generate a spin current and as the interlayer exchange coupling medium to generate an internal field. The critical switching current density at zero field is on the order of 106 A/cm2 due to the large spin Hall angle of β-Ta. The internal field, along with switching efficiency, depends strongly on the orthogonal magnetization states of two ferromagnetic coupling layers in this system.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Magnetic properties of thin films · Ferroelectric and Negative Capacitance Devices · Advanced Memory and Neural Computing
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Physics, Brown University , Providence, Rhode Island 02912, USA
Funding
Nanoelectronics Research Initiative · National Science Foundation
References (29)
Show source-provided references
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